JPS56148874A - Semiconductor photoelectric converter - Google Patents

Semiconductor photoelectric converter

Info

Publication number
JPS56148874A
JPS56148874A JP5250880A JP5250880A JPS56148874A JP S56148874 A JPS56148874 A JP S56148874A JP 5250880 A JP5250880 A JP 5250880A JP 5250880 A JP5250880 A JP 5250880A JP S56148874 A JPS56148874 A JP S56148874A
Authority
JP
Japan
Prior art keywords
amorphous silicon
type amorphous
silicon layer
transparent conductive
incident light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5250880A
Inventor
Kazuhiko Sato
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP5250880A priority Critical patent/JPS56148874A/en
Publication of JPS56148874A publication Critical patent/JPS56148874A/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/075Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
    • H01L31/076Multiple junction or tandem solar cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/54Material technologies
    • Y02E10/548Amorphous silicon PV cells

Abstract

PURPOSE:To effectively utilize incident light by arranging a plurality of junctions forming photoelectric converting regions along the incident light propagating direction and operating the junctions in parallel. CONSTITUTION:An N type amorphous silicon layer 2b, an i type amorphous silicon layer 3b, a P type amorphous silicon layer 4b, a transparent conductive layer 5, a P type amorphous silicon 4a, an i type amorphous silicon layer 3a and an N type amorphous silicon layer 2a are sequentially formed on a substrate electrode 1b. A surface electrode 1a is adhered onto the surface of the layer 2a. The electrode 1a is connected to the electrode 1b by a lead wire, and two photoelectric converting regions a, b operate in parallel at both sides of the transparent conductive film 5.
JP5250880A 1980-04-18 1980-04-18 Semiconductor photoelectric converter Pending JPS56148874A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5250880A JPS56148874A (en) 1980-04-18 1980-04-18 Semiconductor photoelectric converter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5250880A JPS56148874A (en) 1980-04-18 1980-04-18 Semiconductor photoelectric converter

Publications (1)

Publication Number Publication Date
JPS56148874A true JPS56148874A (en) 1981-11-18

Family

ID=12916665

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5250880A Pending JPS56148874A (en) 1980-04-18 1980-04-18 Semiconductor photoelectric converter

Country Status (1)

Country Link
JP (1) JPS56148874A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6132481A (en) * 1984-07-24 1986-02-15 Sharp Corp Amorphous semiconductor element
US4948436A (en) * 1988-02-05 1990-08-14 Siemens Aktiengesellschaft Thin-film solar cell arrangement
US5071490A (en) * 1988-03-18 1991-12-10 Sharp Kabushiki Kaisha Tandem stacked amorphous solar cell device
EP2375455A1 (en) * 2010-04-09 2011-10-12 S.O.I.Tec Silicon on Insulator Technologies Voltage matched multijunction solar cell
JP2016219704A (en) * 2015-05-25 2016-12-22 日産自動車株式会社 Photoelectric conversion device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6132481A (en) * 1984-07-24 1986-02-15 Sharp Corp Amorphous semiconductor element
US4948436A (en) * 1988-02-05 1990-08-14 Siemens Aktiengesellschaft Thin-film solar cell arrangement
US5071490A (en) * 1988-03-18 1991-12-10 Sharp Kabushiki Kaisha Tandem stacked amorphous solar cell device
EP2375455A1 (en) * 2010-04-09 2011-10-12 S.O.I.Tec Silicon on Insulator Technologies Voltage matched multijunction solar cell
WO2011124321A3 (en) * 2010-04-09 2012-05-31 Soitec Voltage matched multijunction solar cell
JP2016219704A (en) * 2015-05-25 2016-12-22 日産自動車株式会社 Photoelectric conversion device

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