JPS57100761A - Semiconductor light sensitive device - Google Patents

Semiconductor light sensitive device

Info

Publication number
JPS57100761A
JPS57100761A JP55177830A JP17783080A JPS57100761A JP S57100761 A JPS57100761 A JP S57100761A JP 55177830 A JP55177830 A JP 55177830A JP 17783080 A JP17783080 A JP 17783080A JP S57100761 A JPS57100761 A JP S57100761A
Authority
JP
Japan
Prior art keywords
depth
layers
substrate
semiconductor light
light sensitive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55177830A
Other languages
Japanese (ja)
Other versions
JPS6322474B2 (en
Inventor
Yoshihiro Arimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55177830A priority Critical patent/JPS57100761A/en
Publication of JPS57100761A publication Critical patent/JPS57100761A/en
Publication of JPS6322474B2 publication Critical patent/JPS6322474B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0475—PV cell arrays made by cells in a planar, e.g. repetitive, configuration on a single semiconductor substrate; PV cell microarrays
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Molecular Biology (AREA)
  • Sustainable Development (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To obtain a high output voltage with monolithic structure by a method wherein a plurality of semiconductor light sensitive elements which are dielectrically isolated each other are formed on a semiconductor substrate and the elements are connected in series by metal wiring layers on the substrate. CONSTITUTION:A plurality of concave sections 2 with a depth of several microns to tens of microns are provided on the main surface of a desired conductive type Si substrate 1 and single crystal magnesia spinel (MgO.Al2O3) layers 3 with a depth of about 1mu are formed at the inside surfaces of the concave sections 2 and N<+> type Si epitaxial layers 4 with a depth of several microns contacting the layers 3 are attached to N type Si epitaxial regions 5 with a depth of several microns to tens of microns and solar cells 7 consisting of P type diffusion regions 6 with a depth of about 1,000Angstrom are formed on the surfaces of the regions 5 and semiconductor light sensitive elements are connected in series or series-parallel by insulating films 8 of SiO2 or the like and metal wiring layers 9 of Al or the like through contact windows 10 on the substrate whereon a plurality of solar cells 7 are formed.
JP55177830A 1980-12-16 1980-12-16 Semiconductor light sensitive device Granted JPS57100761A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55177830A JPS57100761A (en) 1980-12-16 1980-12-16 Semiconductor light sensitive device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55177830A JPS57100761A (en) 1980-12-16 1980-12-16 Semiconductor light sensitive device

Publications (2)

Publication Number Publication Date
JPS57100761A true JPS57100761A (en) 1982-06-23
JPS6322474B2 JPS6322474B2 (en) 1988-05-12

Family

ID=16037848

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55177830A Granted JPS57100761A (en) 1980-12-16 1980-12-16 Semiconductor light sensitive device

Country Status (1)

Country Link
JP (1) JPS57100761A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5922360A (en) * 1982-07-28 1984-02-04 Matsushita Electric Works Ltd Optical input mos type transistor
JPS5936263U (en) * 1982-08-30 1984-03-07 日本電気株式会社 semiconductor equipment
JPS6216568A (en) * 1985-07-15 1987-01-24 Sharp Corp Light-receiving element incorporated in circuit
US5360987A (en) * 1993-11-17 1994-11-01 At&T Bell Laboratories Semiconductor photodiode device with isolation region
US6228750B1 (en) 1994-12-30 2001-05-08 Lucent Technologies Method of doping a semiconductor surface
US6716670B1 (en) 2002-01-09 2004-04-06 Bridge Semiconductor Corporation Method of forming a three-dimensional stacked semiconductor package device
US6936495B1 (en) 2002-01-09 2005-08-30 Bridge Semiconductor Corporation Method of making an optoelectronic semiconductor package device
US6987034B1 (en) 2002-01-09 2006-01-17 Bridge Semiconductor Corporation Method of making a semiconductor package device that includes singulating and trimming a lead
US7190060B1 (en) 2002-01-09 2007-03-13 Bridge Semiconductor Corporation Three-dimensional stacked semiconductor package device with bent and flat leads and method of making same
JP2012129349A (en) * 2010-12-15 2012-07-05 Toyo Univ Semiconductor device
JP2016157956A (en) * 2008-08-29 2016-09-01 タウ−メトリックス インコーポレイテッドＴａｕ−Ｍｅｔｒｉｘ， Ｉｎｃ． Integrated photodiode for semiconductor substrate

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5922360A (en) * 1982-07-28 1984-02-04 Matsushita Electric Works Ltd Optical input mos type transistor
JPS5936263U (en) * 1982-08-30 1984-03-07 日本電気株式会社 semiconductor equipment
JPS6216568A (en) * 1985-07-15 1987-01-24 Sharp Corp Light-receiving element incorporated in circuit
US5360987A (en) * 1993-11-17 1994-11-01 At&T Bell Laboratories Semiconductor photodiode device with isolation region
US6228750B1 (en) 1994-12-30 2001-05-08 Lucent Technologies Method of doping a semiconductor surface
US6891276B1 (en) 2002-01-09 2005-05-10 Bridge Semiconductor Corporation Semiconductor package device
US6774659B1 (en) 2002-01-09 2004-08-10 Bridge Semiconductor Corporation Method of testing a semiconductor package device
US6803651B1 (en) * 2002-01-09 2004-10-12 Bridge Semiconductor Corporation Optoelectronic semiconductor package device
US6716670B1 (en) 2002-01-09 2004-04-06 Bridge Semiconductor Corporation Method of forming a three-dimensional stacked semiconductor package device
US6908794B1 (en) 2002-01-09 2005-06-21 Bridge Semiconductor Corporation Method of making a semiconductor package device that includes a conductive trace with recessed and non-recessed portions
US6936495B1 (en) 2002-01-09 2005-08-30 Bridge Semiconductor Corporation Method of making an optoelectronic semiconductor package device
US6987034B1 (en) 2002-01-09 2006-01-17 Bridge Semiconductor Corporation Method of making a semiconductor package device that includes singulating and trimming a lead
US6989295B1 (en) 2002-01-09 2006-01-24 Bridge Semiconductor Corporation Method of making a semiconductor package device that includes an insulative housing with first and second housing portions
US6989584B1 (en) 2002-01-09 2006-01-24 Bridge Semiconductor Corporation Semiconductor package device that includes a conductive trace with a routing line, a terminal and a lead
US7009309B1 (en) 2002-01-09 2006-03-07 Bridge Semiconductor Corporation Semiconductor package device that includes an insulative housing with a protruding peripheral portion
US7190060B1 (en) 2002-01-09 2007-03-13 Bridge Semiconductor Corporation Three-dimensional stacked semiconductor package device with bent and flat leads and method of making same
JP2016157956A (en) * 2008-08-29 2016-09-01 タウ−メトリックス インコーポレイテッドＴａｕ−Ｍｅｔｒｉｘ， Ｉｎｃ． Integrated photodiode for semiconductor substrate
JP2012129349A (en) * 2010-12-15 2012-07-05 Toyo Univ Semiconductor device

Also Published As

Publication number Publication date
JPS6322474B2 (en) 1988-05-12

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