JPS57102053A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS57102053A JPS57102053A JP17850480A JP17850480A JPS57102053A JP S57102053 A JPS57102053 A JP S57102053A JP 17850480 A JP17850480 A JP 17850480A JP 17850480 A JP17850480 A JP 17850480A JP S57102053 A JPS57102053 A JP S57102053A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- openings
- semiconductor device
- oxide film
- wirings
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To obtain a thermally stabilized semiconductor device by a method wherein electrode wirings of the semiconductor device are constituted of at least a metal film containing a high melting point metal, an electric insulating film having openings and the main electrode wiring metal. CONSTITUTION:The electric insulating film 102 is adhered on a silicon substrate 101 being formed with a semiconductor element, and the openings are formed therein. The high melting point metal layer of a titanium layer 104, for example, and a silicon oxide film 106 are adhered on the upper face thereof. Openings 107a, 107b, 107c are provided in the oxide film 106 to reach the titanium layer 104. Then after an aluminum layer is formed, the aluminum layer, the silicon oxide film 106 and the titanium layer 104 are removed selectively by etching using the photolithography, etc., and aluminum wirings 108a, 108b and the titanium layers 104a, 104b are formed to constitute the electrode wirings. Accordingly deterioration of characteristics, etc., to be generated by thermal reaction between the semiconductor and the main electrode wirings can be prevented.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17850480A JPS57102053A (en) | 1980-12-17 | 1980-12-17 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17850480A JPS57102053A (en) | 1980-12-17 | 1980-12-17 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57102053A true JPS57102053A (en) | 1982-06-24 |
JPS6262056B2 JPS6262056B2 (en) | 1987-12-24 |
Family
ID=16049613
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17850480A Granted JPS57102053A (en) | 1980-12-17 | 1980-12-17 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57102053A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6246559A (en) * | 1985-08-26 | 1987-02-28 | Tech Res & Dev Inst Of Japan Def Agency | Manufacture of image pickup device |
US5266835A (en) * | 1988-02-02 | 1993-11-30 | National Semiconductor Corporation | Semiconductor structure having a barrier layer disposed within openings of a dielectric layer |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63187759U (en) * | 1987-05-25 | 1988-12-01 | ||
JPH0238552U (en) * | 1988-09-06 | 1990-03-14 | ||
JPH03172656A (en) * | 1989-11-30 | 1991-07-26 | Nissan Motor Co Ltd | Moving disc for v-belt type continuously variable transmission |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4943574A (en) * | 1972-08-30 | 1974-04-24 |
-
1980
- 1980-12-17 JP JP17850480A patent/JPS57102053A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4943574A (en) * | 1972-08-30 | 1974-04-24 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6246559A (en) * | 1985-08-26 | 1987-02-28 | Tech Res & Dev Inst Of Japan Def Agency | Manufacture of image pickup device |
JPH0582989B2 (en) * | 1985-08-26 | 1993-11-24 | Boeicho Gijutsu Kenkyu Honbucho | |
US5266835A (en) * | 1988-02-02 | 1993-11-30 | National Semiconductor Corporation | Semiconductor structure having a barrier layer disposed within openings of a dielectric layer |
Also Published As
Publication number | Publication date |
---|---|
JPS6262056B2 (en) | 1987-12-24 |
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