JPS57102053A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57102053A
JPS57102053A JP17850480A JP17850480A JPS57102053A JP S57102053 A JPS57102053 A JP S57102053A JP 17850480 A JP17850480 A JP 17850480A JP 17850480 A JP17850480 A JP 17850480A JP S57102053 A JPS57102053 A JP S57102053A
Authority
JP
Japan
Prior art keywords
layer
openings
semiconductor device
oxide film
wirings
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17850480A
Other languages
Japanese (ja)
Other versions
JPS6262056B2 (en
Inventor
Masaharu Yorikane
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP17850480A priority Critical patent/JPS57102053A/en
Publication of JPS57102053A publication Critical patent/JPS57102053A/en
Publication of JPS6262056B2 publication Critical patent/JPS6262056B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To obtain a thermally stabilized semiconductor device by a method wherein electrode wirings of the semiconductor device are constituted of at least a metal film containing a high melting point metal, an electric insulating film having openings and the main electrode wiring metal. CONSTITUTION:The electric insulating film 102 is adhered on a silicon substrate 101 being formed with a semiconductor element, and the openings are formed therein. The high melting point metal layer of a titanium layer 104, for example, and a silicon oxide film 106 are adhered on the upper face thereof. Openings 107a, 107b, 107c are provided in the oxide film 106 to reach the titanium layer 104. Then after an aluminum layer is formed, the aluminum layer, the silicon oxide film 106 and the titanium layer 104 are removed selectively by etching using the photolithography, etc., and aluminum wirings 108a, 108b and the titanium layers 104a, 104b are formed to constitute the electrode wirings. Accordingly deterioration of characteristics, etc., to be generated by thermal reaction between the semiconductor and the main electrode wirings can be prevented.
JP17850480A 1980-12-17 1980-12-17 Semiconductor device Granted JPS57102053A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17850480A JPS57102053A (en) 1980-12-17 1980-12-17 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17850480A JPS57102053A (en) 1980-12-17 1980-12-17 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS57102053A true JPS57102053A (en) 1982-06-24
JPS6262056B2 JPS6262056B2 (en) 1987-12-24

Family

ID=16049613

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17850480A Granted JPS57102053A (en) 1980-12-17 1980-12-17 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57102053A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6246559A (en) * 1985-08-26 1987-02-28 Tech Res & Dev Inst Of Japan Def Agency Manufacture of image pickup device
US5266835A (en) * 1988-02-02 1993-11-30 National Semiconductor Corporation Semiconductor structure having a barrier layer disposed within openings of a dielectric layer

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63187759U (en) * 1987-05-25 1988-12-01
JPH0238552U (en) * 1988-09-06 1990-03-14
JPH03172656A (en) * 1989-11-30 1991-07-26 Nissan Motor Co Ltd Moving disc for v-belt type continuously variable transmission

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4943574A (en) * 1972-08-30 1974-04-24

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4943574A (en) * 1972-08-30 1974-04-24

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6246559A (en) * 1985-08-26 1987-02-28 Tech Res & Dev Inst Of Japan Def Agency Manufacture of image pickup device
JPH0582989B2 (en) * 1985-08-26 1993-11-24 Boeicho Gijutsu Kenkyu Honbucho
US5266835A (en) * 1988-02-02 1993-11-30 National Semiconductor Corporation Semiconductor structure having a barrier layer disposed within openings of a dielectric layer

Also Published As

Publication number Publication date
JPS6262056B2 (en) 1987-12-24

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