JPS5772343A - Manufacture of semionductor device - Google Patents
Manufacture of semionductor deviceInfo
- Publication number
- JPS5772343A JPS5772343A JP14836280A JP14836280A JPS5772343A JP S5772343 A JPS5772343 A JP S5772343A JP 14836280 A JP14836280 A JP 14836280A JP 14836280 A JP14836280 A JP 14836280A JP S5772343 A JPS5772343 A JP S5772343A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- oxide film
- film
- approximately
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
Abstract
PURPOSE:To prevent occurrence of oxidation inducing layer fault and improve reliability and yield, by forming a thin oxide film in a region, in which a semiconductor element is scheduled to be formed, and also by forming a thick oxide film in an electric conductive substance layer in such a manner as to leave the electric conductive substance layer in the layer. CONSTITUTION:A thermally oxidized film 2 is formed on the surface of a semiconductor substrate 1, and a polycrystalline silicon layer 3 which can be quickly oxidized is formed on the film 2. A resist 4 is provided on the layer 3, and this layer 3 is removed by plasma etching. By oxidizing the remained layer 3 by low- temperature combustion, at such a temperature as 850 deg.C and for approximately 200min, a thick oxide film 5, whose film thickness is approximately 0.6mum, is formed leaving approximately 0.1mum of an amorphous silicon layer 7. Then the oxide film 6 penetrating into the substrate 1 is removed by etching with ammonium fluoride. And then, by providing a series of treatments on the substrate 1 including oxidation and dispersion, etc., a semiconductor element, such as MOSFET and bipolar transistor, etc. is formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14836280A JPS5772343A (en) | 1980-10-24 | 1980-10-24 | Manufacture of semionductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14836280A JPS5772343A (en) | 1980-10-24 | 1980-10-24 | Manufacture of semionductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5772343A true JPS5772343A (en) | 1982-05-06 |
Family
ID=15451060
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14836280A Pending JPS5772343A (en) | 1980-10-24 | 1980-10-24 | Manufacture of semionductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5772343A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102019117182A1 (en) | 2018-07-18 | 2020-01-23 | Mikuni Corporation | Electromagnetic valve |
-
1980
- 1980-10-24 JP JP14836280A patent/JPS5772343A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102019117182A1 (en) | 2018-07-18 | 2020-01-23 | Mikuni Corporation | Electromagnetic valve |
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