JPS5582451A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5582451A
JPS5582451A JP15513478A JP15513478A JPS5582451A JP S5582451 A JPS5582451 A JP S5582451A JP 15513478 A JP15513478 A JP 15513478A JP 15513478 A JP15513478 A JP 15513478A JP S5582451 A JPS5582451 A JP S5582451A
Authority
JP
Japan
Prior art keywords
coated
oxide film
insulating film
layer
manufactured
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15513478A
Other languages
Japanese (ja)
Other versions
JPS6129144B2 (en
Inventor
Takashi Yamamoto
Shinpei Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15513478A priority Critical patent/JPS5582451A/en
Publication of JPS5582451A publication Critical patent/JPS5582451A/en
Publication of JPS6129144B2 publication Critical patent/JPS6129144B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Formation Of Insulating Films (AREA)
  • Non-Volatile Memory (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To make a good insulating film on the surface of a semiconductor layer, by injecting impurity ions into the layer and then oxidizing the surface of the layer at a relatively low temperature under an atmosphere containing oxygen and hydrogen chloride.
CONSTITUTION: A field oxide film 21 and a gate insulating film 22 are produced on the main surface of a silicon single crystal substrate 10. Polycrystalline silicon is then coated. A floating gate 31 and a wiring 32 are provided. A gate oxide film is etched off. Phosphorus ions are injected. The assembly is heated at 1050°C under an atmosphere containing oxygen and hydrogen chloride for 40min so that an oxide film 31 is produced and impurities for a source and a drain are activated. Other polycrystalline silicon is coated. A control electrode 50 is manufactured. Phosphosilicate glass is coated. An opening is provided. An aluminium electrode 70 is manufactured. This results in obtaining an insulating film 31 which has a high insulating property and is hardly adversely affected by high-temperature oxidation.
COPYRIGHT: (C)1980,JPO&Japio
JP15513478A 1978-12-14 1978-12-14 Manufacture of semiconductor device Granted JPS5582451A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15513478A JPS5582451A (en) 1978-12-14 1978-12-14 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15513478A JPS5582451A (en) 1978-12-14 1978-12-14 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5582451A true JPS5582451A (en) 1980-06-21
JPS6129144B2 JPS6129144B2 (en) 1986-07-04

Family

ID=15599289

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15513478A Granted JPS5582451A (en) 1978-12-14 1978-12-14 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5582451A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57204174A (en) * 1981-06-09 1982-12-14 Fujitsu Ltd Manufacture of semiconductor device
JPS6052059A (en) * 1983-08-31 1985-03-23 Toshiba Corp Manufacture of semiconductor device
US5077229A (en) * 1988-10-10 1991-12-31 Eniricerche S.P.A. Monolithic chemical sensor of the chemfet type incorporating an ion-selective membrane and method of making the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57204174A (en) * 1981-06-09 1982-12-14 Fujitsu Ltd Manufacture of semiconductor device
JPS6052059A (en) * 1983-08-31 1985-03-23 Toshiba Corp Manufacture of semiconductor device
US5077229A (en) * 1988-10-10 1991-12-31 Eniricerche S.P.A. Monolithic chemical sensor of the chemfet type incorporating an ion-selective membrane and method of making the same

Also Published As

Publication number Publication date
JPS6129144B2 (en) 1986-07-04

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