JPS5650573A - Mis tunnel diode type mosfet - Google Patents
Mis tunnel diode type mosfetInfo
- Publication number
- JPS5650573A JPS5650573A JP12641579A JP12641579A JPS5650573A JP S5650573 A JPS5650573 A JP S5650573A JP 12641579 A JP12641579 A JP 12641579A JP 12641579 A JP12641579 A JP 12641579A JP S5650573 A JPS5650573 A JP S5650573A
- Authority
- JP
- Japan
- Prior art keywords
- forming
- oxide film
- substrate
- thickness
- tunnel diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 abstract 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 2
- 229910052760 oxygen Inorganic materials 0.000 abstract 2
- 239000001301 oxygen Substances 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 230000000717 retained effect Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
Abstract
PURPOSE:To contrive the facilitation of an MIS tunnel diode type MOSFET by not forming a diffused region on the surface of a substrate, forming once an insulating film thereon, selectively etching a part of the film so as not to repeat the step of forming an insulating film, and thereby freely selecting an electrode forming machine. CONSTITUTION:A silicon oxide film 2 is grown on a thickness of higher than 100Angstrom on the surface of an n type silicon substrate 1. The substrate 1 is thermally oxidized at a temperature higher than 1,000 deg.C in oxygen or oxygen and steam mixture atmosphere or is formed by a plasma oxidation process. Subsequently, the oxide film is selectively photoetched at predetermined portions 21, 22 adjacent to the source and drain electrodes 31 and 32 so as to have a thickness less than 100Angstrom . However, the predetermined oxide film 20 disposed directly under the gate 4 is retained in the thickness higher than 100Angstrom . Thereafter, gold is evaporated, the electrodes 31, 32 are evaporated with aluminum, and the gate 4 is selectively formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12641579A JPS5650573A (en) | 1979-10-02 | 1979-10-02 | Mis tunnel diode type mosfet |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12641579A JPS5650573A (en) | 1979-10-02 | 1979-10-02 | Mis tunnel diode type mosfet |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5650573A true JPS5650573A (en) | 1981-05-07 |
Family
ID=14934593
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12641579A Pending JPS5650573A (en) | 1979-10-02 | 1979-10-02 | Mis tunnel diode type mosfet |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5650573A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57130469A (en) * | 1981-02-05 | 1982-08-12 | Seiko Epson Corp | Mis type semiconductor device |
| JPS63127220A (en) * | 1986-11-17 | 1988-05-31 | Fuji Photo Optical Co Ltd | Electronic endoscope |
| JP2005333151A (en) * | 2005-06-13 | 2005-12-02 | Takashi Katoda | Electronic device and optical device having ultrafine structure made through use of focused ion beam |
-
1979
- 1979-10-02 JP JP12641579A patent/JPS5650573A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57130469A (en) * | 1981-02-05 | 1982-08-12 | Seiko Epson Corp | Mis type semiconductor device |
| JPS63127220A (en) * | 1986-11-17 | 1988-05-31 | Fuji Photo Optical Co Ltd | Electronic endoscope |
| JP2005333151A (en) * | 2005-06-13 | 2005-12-02 | Takashi Katoda | Electronic device and optical device having ultrafine structure made through use of focused ion beam |
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