JPS5630768A - Manufacture of mnos type semiconductor device - Google Patents

Manufacture of mnos type semiconductor device

Info

Publication number
JPS5630768A
JPS5630768A JP10635679A JP10635679A JPS5630768A JP S5630768 A JPS5630768 A JP S5630768A JP 10635679 A JP10635679 A JP 10635679A JP 10635679 A JP10635679 A JP 10635679A JP S5630768 A JPS5630768 A JP S5630768A
Authority
JP
Japan
Prior art keywords
film
sio2
layer
substrate
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10635679A
Other languages
Japanese (ja)
Inventor
Shigetoshi Takayanagi
Shigenobu Akiyama
Nobuyasu Hase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP10635679A priority Critical patent/JPS5630768A/en
Publication of JPS5630768A publication Critical patent/JPS5630768A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To obtain an MNOS type memory device which is flat on the surface in high dimensional accuracy and accommodates excellent MOS characteristics by forming a field oxide film in combination of the oxidation of a Si porous layer obtained by an electrochemistry in a concentrated HF solution and selective oxidation thereof. CONSTITUTION:An Si3N4 film 2 is coated on an N type Si substrate 1, is photoetched to be retained only on the channel region of an MNOS type transistor, and with the film 2 as a mask it is anodized ordinarily in a concentrated HF solution, and the exposed surface of the substrate 1 is thus transformed to a Si porous layer 3. Then, a photoresist film 20 is coated on the portion except the region forming source and drain layers, P type impurity ion is implanted while its density peak is retained at the side of the substrate 1, the film 20 is then removed, it is then heat treated in O2 atmosphere, and the layer 3 is transformed to an SiO2 film. Thereafter, it is continuously heat treated in N2 and N2, O2 atmospheres to activate the ion implanted regions, and P type source and drain regions 4 are formed, and the SiO2 film can be completely formed simultaneously in an SiO2 layer 5. Consequently, flat field SiO2 layer 5 can be obtained, and the film 20 is removed.
JP10635679A 1979-08-20 1979-08-20 Manufacture of mnos type semiconductor device Pending JPS5630768A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10635679A JPS5630768A (en) 1979-08-20 1979-08-20 Manufacture of mnos type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10635679A JPS5630768A (en) 1979-08-20 1979-08-20 Manufacture of mnos type semiconductor device

Publications (1)

Publication Number Publication Date
JPS5630768A true JPS5630768A (en) 1981-03-27

Family

ID=14431472

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10635679A Pending JPS5630768A (en) 1979-08-20 1979-08-20 Manufacture of mnos type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5630768A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5956771A (en) * 1982-09-27 1984-04-02 Hitachi Ltd Semiconductor device and manufacture thereof
US5278438A (en) * 1991-12-19 1994-01-11 North American Philips Corporation Electrically erasable and programmable read-only memory with source and drain regions along sidewalls of a trench structure
CN110240118A (en) * 2019-05-22 2019-09-17 江苏大学 A kind of higher middle resistance p-type porous silicon film of porosity and its fast preparation method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5956771A (en) * 1982-09-27 1984-04-02 Hitachi Ltd Semiconductor device and manufacture thereof
US5278438A (en) * 1991-12-19 1994-01-11 North American Philips Corporation Electrically erasable and programmable read-only memory with source and drain regions along sidewalls of a trench structure
CN110240118A (en) * 2019-05-22 2019-09-17 江苏大学 A kind of higher middle resistance p-type porous silicon film of porosity and its fast preparation method

Similar Documents

Publication Publication Date Title
JPS5591877A (en) Manufacture of semiconductor device
JPS5736842A (en) Semiconductor integrated circuit device
JPS5630768A (en) Manufacture of mnos type semiconductor device
JPS55157241A (en) Manufacture of semiconductor device
JPS5690549A (en) Mos type semiconductor device and its manufacture
JPS5726467A (en) Manufacture of semiconductor device
JPS56103445A (en) Production of semiconductor device
JPS57128957A (en) Semiconductor integrated circuit device and manufacture thereof
JPS56130970A (en) Manufacture of semiconductor device
JPS5650573A (en) Mis tunnel diode type mosfet
JPS5739579A (en) Mos semiconductor device and manufacture thereof
JPS57130471A (en) Manufacture of metal oxide semiconductor field-effect transistor
JPS56104470A (en) Semiconductor device and manufacture thereof
JPS5591857A (en) Manufacture of semiconductor device
JPS5756965A (en) Manufacture of semiconductor device
JPS5591858A (en) Manufacture of semiconductor device
JPS5685866A (en) Mos semiconductor device and manufacture thereof
JPS5591872A (en) Manufacture of semiconductor device
JPS54104785A (en) P-wel and its forming method
JPS556880A (en) Manufacture of insulating gate type field-effect transistor
JPS6412575A (en) Manufacture of mos semiconductor device
JPS57155767A (en) Manufacture of semiconductor device
JPS5670665A (en) Manufacture of semiconductor device
JPS5538017A (en) Manufacturing of semiconductor memory device
JPS54156482A (en) Manufacture for field effect type semiconductor device