JPS55130174A - Method of fabricating semiconductor device - Google Patents
Method of fabricating semiconductor deviceInfo
- Publication number
- JPS55130174A JPS55130174A JP3821479A JP3821479A JPS55130174A JP S55130174 A JPS55130174 A JP S55130174A JP 3821479 A JP3821479 A JP 3821479A JP 3821479 A JP3821479 A JP 3821479A JP S55130174 A JPS55130174 A JP S55130174A
- Authority
- JP
- Japan
- Prior art keywords
- film
- oxide film
- impurity layer
- gate
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000012535 impurity Substances 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000005468 ion implantation Methods 0.000 abstract 2
- 230000003647 oxidation Effects 0.000 abstract 2
- 238000007254 oxidation reaction Methods 0.000 abstract 2
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000007772 electrode material Substances 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To microminiaturize a semiconductor device and enhance the integrity of the device by selectively oxidizing an electrode material film on the entire surface of a substrate to form predetermined electrode pattern and forming an impurity layer of a region adjacent to the electrode pattern by an ion implantation process. CONSTITUTION:A field oxide film 2 is formed on the surface of a p-type silicon substrate 1 by a selective oxidation process or the like. A gate oxide film 3 is formed on the surface of the substrate, and a polycrystalline silicon film 4 is subsequently formed thereon. A silicon oxide film 5 is then formed thereon, photoetched to selectively retain the film 5 on the gate electrode forming region, and with the film 5 as a mask to form n<+>-type source impurity layer 6 and drain impurity layer 7 by ion implantation process. With the film 5 as an oxidation resistance mask the layers are thermally oxidized to convert the portion except the gate electode region of the film 4 into a silicon oxide film 42 and to form a gate electrode 41 under the film 5. Contact holes are formed in the source and drain electrode leading regions, respectively, and electrodes are then arranged.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3821479A JPS55130174A (en) | 1979-03-30 | 1979-03-30 | Method of fabricating semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3821479A JPS55130174A (en) | 1979-03-30 | 1979-03-30 | Method of fabricating semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55130174A true JPS55130174A (en) | 1980-10-08 |
Family
ID=12519053
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3821479A Pending JPS55130174A (en) | 1979-03-30 | 1979-03-30 | Method of fabricating semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55130174A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0512128U (en) * | 1991-07-30 | 1993-02-19 | タキロン株式会社 | Metal / resin laminate |
| JP2007326389A (en) * | 2006-06-06 | 2007-12-20 | Sanden Corp | Air conditioning system for vehicle |
-
1979
- 1979-03-30 JP JP3821479A patent/JPS55130174A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0512128U (en) * | 1991-07-30 | 1993-02-19 | タキロン株式会社 | Metal / resin laminate |
| JP2007326389A (en) * | 2006-06-06 | 2007-12-20 | Sanden Corp | Air conditioning system for vehicle |
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