JPS5376770A - Production of insulated gate field effect transistor - Google Patents
Production of insulated gate field effect transistorInfo
- Publication number
- JPS5376770A JPS5376770A JP15194276A JP15194276A JPS5376770A JP S5376770 A JPS5376770 A JP S5376770A JP 15194276 A JP15194276 A JP 15194276A JP 15194276 A JP15194276 A JP 15194276A JP S5376770 A JPS5376770 A JP S5376770A
- Authority
- JP
- Japan
- Prior art keywords
- production
- field effect
- effect transistor
- insulated gate
- gate field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To simplify processes and obtain fine structure by forming a thin layer of a high impurity concentration on a semiconductor substrate as source and drain regions, and forming the insulator of a gate region and a gate metal electrode through self-alignment by using said thin layer.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP51151942A JPS5946109B2 (en) | 1976-12-20 | 1976-12-20 | Method for manufacturing insulated gate field effect transistor |
US05/825,720 US4157610A (en) | 1976-12-20 | 1977-08-18 | Method of manufacturing a field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP51151942A JPS5946109B2 (en) | 1976-12-20 | 1976-12-20 | Method for manufacturing insulated gate field effect transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5376770A true JPS5376770A (en) | 1978-07-07 |
JPS5946109B2 JPS5946109B2 (en) | 1984-11-10 |
Family
ID=15529569
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP51151942A Expired JPS5946109B2 (en) | 1976-12-20 | 1976-12-20 | Method for manufacturing insulated gate field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5946109B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5423385A (en) * | 1977-07-22 | 1979-02-21 | Matsushita Electric Ind Co Ltd | Gallium-arsenide semiconductor device |
JPS5629371A (en) * | 1979-08-20 | 1981-03-24 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of insulated gate type field effect transistor |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4864889A (en) * | 1971-12-08 | 1973-09-07 | ||
JPS5019399A (en) * | 1973-06-21 | 1975-02-28 |
-
1976
- 1976-12-20 JP JP51151942A patent/JPS5946109B2/en not_active Expired
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4864889A (en) * | 1971-12-08 | 1973-09-07 | ||
JPS5019399A (en) * | 1973-06-21 | 1975-02-28 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5423385A (en) * | 1977-07-22 | 1979-02-21 | Matsushita Electric Ind Co Ltd | Gallium-arsenide semiconductor device |
JPS5629371A (en) * | 1979-08-20 | 1981-03-24 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of insulated gate type field effect transistor |
Also Published As
Publication number | Publication date |
---|---|
JPS5946109B2 (en) | 1984-11-10 |
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