JPS5225582A - Production method of semiconductor device - Google Patents

Production method of semiconductor device

Info

Publication number
JPS5225582A
JPS5225582A JP10117075A JP10117075A JPS5225582A JP S5225582 A JPS5225582 A JP S5225582A JP 10117075 A JP10117075 A JP 10117075A JP 10117075 A JP10117075 A JP 10117075A JP S5225582 A JPS5225582 A JP S5225582A
Authority
JP
Japan
Prior art keywords
semiconductor device
production method
source
metal
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10117075A
Other languages
Japanese (ja)
Inventor
Kazuhide Kiuchi
Hideo Oikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP10117075A priority Critical patent/JPS5225582A/en
Publication of JPS5225582A publication Critical patent/JPS5225582A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To reduce the gate capacity of a semiconductor device by reducing the overlapping of the source metal and the source and drain diffusion layer, by means of etching the gate metal for two times.
COPYRIGHT: (C)1977,JPO&Japio
JP10117075A 1975-08-22 1975-08-22 Production method of semiconductor device Pending JPS5225582A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10117075A JPS5225582A (en) 1975-08-22 1975-08-22 Production method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10117075A JPS5225582A (en) 1975-08-22 1975-08-22 Production method of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5225582A true JPS5225582A (en) 1977-02-25

Family

ID=14293536

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10117075A Pending JPS5225582A (en) 1975-08-22 1975-08-22 Production method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5225582A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52138400A (en) * 1976-05-13 1977-11-18 Hitachi Plant Eng & Constr Co Ltd Device for confirming water pressure of sprinkler head
JPS546778A (en) * 1977-06-17 1979-01-19 Sharp Corp Manufacture of mos field effect transistor
JPS5594659A (en) * 1979-01-09 1980-07-18 Robatel Slpi Centrifugal machine
US5115290A (en) * 1989-09-06 1992-05-19 Kabushiki Kaisha Toshiba Mos type semiconductor device and method for manufacturing the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4917073A (en) * 1972-06-09 1974-02-15

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4917073A (en) * 1972-06-09 1974-02-15

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52138400A (en) * 1976-05-13 1977-11-18 Hitachi Plant Eng & Constr Co Ltd Device for confirming water pressure of sprinkler head
JPS5525864B2 (en) * 1976-05-13 1980-07-09
JPS546778A (en) * 1977-06-17 1979-01-19 Sharp Corp Manufacture of mos field effect transistor
JPS5594659A (en) * 1979-01-09 1980-07-18 Robatel Slpi Centrifugal machine
US5115290A (en) * 1989-09-06 1992-05-19 Kabushiki Kaisha Toshiba Mos type semiconductor device and method for manufacturing the same

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