JPS5423479A - Manufacture for field effect transistor of insulation gate type - Google Patents

Manufacture for field effect transistor of insulation gate type

Info

Publication number
JPS5423479A
JPS5423479A JP8843777A JP8843777A JPS5423479A JP S5423479 A JPS5423479 A JP S5423479A JP 8843777 A JP8843777 A JP 8843777A JP 8843777 A JP8843777 A JP 8843777A JP S5423479 A JPS5423479 A JP S5423479A
Authority
JP
Japan
Prior art keywords
manufacture
field effect
effect transistor
gate type
insulation gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8843777A
Other languages
Japanese (ja)
Inventor
Yoshiaki Onishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP8843777A priority Critical patent/JPS5423479A/en
Publication of JPS5423479A publication Critical patent/JPS5423479A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To simplify the manufacturing process, by finishing the process with three etching processes; oxide film etching to form gate oxide film, nitride film etching to form source and drain regions, and metal evaporation layer etching for electrode formation.
COPYRIGHT: (C)1979,JPO&Japio
JP8843777A 1977-07-25 1977-07-25 Manufacture for field effect transistor of insulation gate type Pending JPS5423479A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8843777A JPS5423479A (en) 1977-07-25 1977-07-25 Manufacture for field effect transistor of insulation gate type

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8843777A JPS5423479A (en) 1977-07-25 1977-07-25 Manufacture for field effect transistor of insulation gate type

Publications (1)

Publication Number Publication Date
JPS5423479A true JPS5423479A (en) 1979-02-22

Family

ID=13942762

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8843777A Pending JPS5423479A (en) 1977-07-25 1977-07-25 Manufacture for field effect transistor of insulation gate type

Country Status (1)

Country Link
JP (1) JPS5423479A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0016968A1 (en) * 1979-04-09 1980-10-15 International Business Machines Corporation Method for fabricating self-aligned high resolution non planar devices employing low resolution registration

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS508483A (en) * 1973-05-21 1975-01-28

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS508483A (en) * 1973-05-21 1975-01-28

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0016968A1 (en) * 1979-04-09 1980-10-15 International Business Machines Corporation Method for fabricating self-aligned high resolution non planar devices employing low resolution registration

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