JPS5436190A - Manufacture for semiconductor device - Google Patents
Manufacture for semiconductor deviceInfo
- Publication number
- JPS5436190A JPS5436190A JP10233777A JP10233777A JPS5436190A JP S5436190 A JPS5436190 A JP S5436190A JP 10233777 A JP10233777 A JP 10233777A JP 10233777 A JP10233777 A JP 10233777A JP S5436190 A JPS5436190 A JP S5436190A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- manufacture
- semiconductor device
- substrate
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To enable to form MIS type element even to the substrate hardly easy for stable oxide film formation, by forming the source and the drain region on the semiconductor substrate, oxidizing those with plasma after coating the region between them with the V group metallic thin film, and by converting the substrate under this into the gate oxide film.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10233777A JPS5436190A (en) | 1977-08-26 | 1977-08-26 | Manufacture for semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10233777A JPS5436190A (en) | 1977-08-26 | 1977-08-26 | Manufacture for semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5436190A true JPS5436190A (en) | 1979-03-16 |
Family
ID=14324687
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10233777A Pending JPS5436190A (en) | 1977-08-26 | 1977-08-26 | Manufacture for semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5436190A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1699085A2 (en) | 2005-03-03 | 2006-09-06 | Fujitsu Limited | III-V nitride semiconductor device and production method thereof |
-
1977
- 1977-08-26 JP JP10233777A patent/JPS5436190A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1699085A2 (en) | 2005-03-03 | 2006-09-06 | Fujitsu Limited | III-V nitride semiconductor device and production method thereof |
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