JPS5318983A - Mis field effect type semiconductor device - Google Patents

Mis field effect type semiconductor device

Info

Publication number
JPS5318983A
JPS5318983A JP9387276A JP9387276A JPS5318983A JP S5318983 A JPS5318983 A JP S5318983A JP 9387276 A JP9387276 A JP 9387276A JP 9387276 A JP9387276 A JP 9387276A JP S5318983 A JPS5318983 A JP S5318983A
Authority
JP
Japan
Prior art keywords
semiconductor device
type semiconductor
field effect
effect type
mis field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9387276A
Other languages
Japanese (ja)
Other versions
JPS5916422B2 (en
Inventor
Jiro Suma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP51093872A priority Critical patent/JPS5916422B2/en
Publication of JPS5318983A publication Critical patent/JPS5318983A/en
Publication of JPS5916422B2 publication Critical patent/JPS5916422B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To improve yield and reliability by forming MISFETs of varying threshold voltages on the same semiconductor substrate without requiring complex processes.
COPYRIGHT: (C)1978,JPO&Japio
JP51093872A 1976-08-05 1976-08-05 MIS field effect semiconductor device Expired JPS5916422B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51093872A JPS5916422B2 (en) 1976-08-05 1976-08-05 MIS field effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51093872A JPS5916422B2 (en) 1976-08-05 1976-08-05 MIS field effect semiconductor device

Publications (2)

Publication Number Publication Date
JPS5318983A true JPS5318983A (en) 1978-02-21
JPS5916422B2 JPS5916422B2 (en) 1984-04-16

Family

ID=14094541

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51093872A Expired JPS5916422B2 (en) 1976-08-05 1976-08-05 MIS field effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS5916422B2 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4979186A (en) * 1972-12-04 1974-07-31
JPS50157082A (en) * 1974-06-07 1975-12-18

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4979186A (en) * 1972-12-04 1974-07-31
JPS50157082A (en) * 1974-06-07 1975-12-18

Also Published As

Publication number Publication date
JPS5916422B2 (en) 1984-04-16

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