JPS54879A - Manufacture of mis transistor - Google Patents

Manufacture of mis transistor

Info

Publication number
JPS54879A
JPS54879A JP6544477A JP6544477A JPS54879A JP S54879 A JPS54879 A JP S54879A JP 6544477 A JP6544477 A JP 6544477A JP 6544477 A JP6544477 A JP 6544477A JP S54879 A JPS54879 A JP S54879A
Authority
JP
Japan
Prior art keywords
manufacture
oxide film
mis transistor
mask
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6544477A
Other languages
Japanese (ja)
Other versions
JPS5642145B2 (en
Inventor
Tetsuo Hosoya
Susumu Muramoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP6544477A priority Critical patent/JPS54879A/en
Publication of JPS54879A publication Critical patent/JPS54879A/en
Publication of JPS5642145B2 publication Critical patent/JPS5642145B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Non-Volatile Memory (AREA)

Abstract

PURPOSE: To reduce the number of the masking processes and thus to simplify the ma manufacture of the MIS transistor, by growing the oxide film and the poly-crystal semiconductor layer on the semiconductor substrate, forming a reverse conduction type region by using a mask, converting the exposed poly-crystal layer into the oxide film, and forming the same conduction type region using the converted oxide film as the mask.
COPYRIGHT: (C)1979,JPO&Japio
JP6544477A 1977-06-03 1977-06-03 Manufacture of mis transistor Granted JPS54879A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6544477A JPS54879A (en) 1977-06-03 1977-06-03 Manufacture of mis transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6544477A JPS54879A (en) 1977-06-03 1977-06-03 Manufacture of mis transistor

Publications (2)

Publication Number Publication Date
JPS54879A true JPS54879A (en) 1979-01-06
JPS5642145B2 JPS5642145B2 (en) 1981-10-02

Family

ID=13287302

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6544477A Granted JPS54879A (en) 1977-06-03 1977-06-03 Manufacture of mis transistor

Country Status (1)

Country Link
JP (1) JPS54879A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5165366A (en) * 1974-12-03 1976-06-05 Sharp Kk SANKABUTSUTOMEIDODENMAKUNO ETSUCHINGUHOHO
JPH01500390A (en) * 1986-05-12 1989-02-09 プレッシー　セミコンダクターズ　リミテッド Improvements in transistors

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7053180B2 (en) 2017-07-11 2022-04-12 株式会社東芝 Information processing equipment, information processing methods, programs, and information processing systems

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5165366A (en) * 1974-12-03 1976-06-05 Sharp Kk SANKABUTSUTOMEIDODENMAKUNO ETSUCHINGUHOHO
JPH01500390A (en) * 1986-05-12 1989-02-09 プレッシー　セミコンダクターズ　リミテッド Improvements in transistors

Also Published As

Publication number Publication date
JPS5642145B2 (en) 1981-10-02

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