JPS5265683A - Production of insulated gate type mis semiconductor device - Google Patents

Production of insulated gate type mis semiconductor device

Info

Publication number
JPS5265683A
JPS5265683A JP50141665A JP14166575A JPS5265683A JP S5265683 A JPS5265683 A JP S5265683A JP 50141665 A JP50141665 A JP 50141665A JP 14166575 A JP14166575 A JP 14166575A JP S5265683 A JPS5265683 A JP S5265683A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
insulated gate
gate type
type mis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50141665A
Other languages
Japanese (ja)
Inventor
Kazuo Ito
Kuniki Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP50141665A priority Critical patent/JPS5265683A/en
Publication of JPS5265683A publication Critical patent/JPS5265683A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To reduce parasitic capacity by removing by etching the soruce, drain and gate forming portions of the insulating film on the surface of a semiconductor substrate, depositin ga polycrystalline Si layer containing an impurity of the conductivity type opposite to that of the substrate,, using this layer as a diffusion source, removing the channel portions of the insulating film by etching, repeating heat treatment several times, then forming a gate electrode.
JP50141665A 1975-11-28 1975-11-28 Production of insulated gate type mis semiconductor device Pending JPS5265683A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50141665A JPS5265683A (en) 1975-11-28 1975-11-28 Production of insulated gate type mis semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50141665A JPS5265683A (en) 1975-11-28 1975-11-28 Production of insulated gate type mis semiconductor device

Publications (1)

Publication Number Publication Date
JPS5265683A true JPS5265683A (en) 1977-05-31

Family

ID=15297318

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50141665A Pending JPS5265683A (en) 1975-11-28 1975-11-28 Production of insulated gate type mis semiconductor device

Country Status (1)

Country Link
JP (1) JPS5265683A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS554964A (en) * 1978-06-27 1980-01-14 Toshiba Corp Manufacture of mos type semiconductor
JPS5567166A (en) * 1978-11-15 1980-05-21 Fujitsu Ltd Preparation of mos type semiconductor device
JPS5613757A (en) * 1979-07-03 1981-02-10 Siemens Ag Method of manufacturing low resistance diffused region
JPS5732674A (en) * 1980-07-08 1982-02-22 Ibm Integrated circuit structure
EP0459398A2 (en) * 1990-05-28 1991-12-04 Kabushiki Kaisha Toshiba Manufacturing method of a channel in MOS semiconductor devices

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS554964A (en) * 1978-06-27 1980-01-14 Toshiba Corp Manufacture of mos type semiconductor
JPS5567166A (en) * 1978-11-15 1980-05-21 Fujitsu Ltd Preparation of mos type semiconductor device
JPS628956B2 (en) * 1978-11-15 1987-02-25 Fujitsu Ltd
JPS5613757A (en) * 1979-07-03 1981-02-10 Siemens Ag Method of manufacturing low resistance diffused region
JPS5732674A (en) * 1980-07-08 1982-02-22 Ibm Integrated circuit structure
JPH033389B2 (en) * 1980-07-08 1991-01-18 Intaanashonaru Bijinesu Mashiinzu Corp
EP0459398A2 (en) * 1990-05-28 1991-12-04 Kabushiki Kaisha Toshiba Manufacturing method of a channel in MOS semiconductor devices

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