JPS53110479A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS53110479A JPS53110479A JP2555977A JP2555977A JPS53110479A JP S53110479 A JPS53110479 A JP S53110479A JP 2555977 A JP2555977 A JP 2555977A JP 2555977 A JP2555977 A JP 2555977A JP S53110479 A JPS53110479 A JP S53110479A
- Authority
- JP
- Japan
- Prior art keywords
- production
- semiconductor device
- making possible
- alignment
- high speed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Drying Of Semiconductors (AREA)
- Weting (AREA)
Abstract
PURPOSE: To reduce element size by making possible mutual self-alignment of gate electrodes, source and drain diffused and buried insulation layers, making possible high speed operation by reducing junction capacity and preventing disconnection by flattening substrate surface.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2555977A JPS53110479A (en) | 1977-03-09 | 1977-03-09 | Production of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2555977A JPS53110479A (en) | 1977-03-09 | 1977-03-09 | Production of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS53110479A true JPS53110479A (en) | 1978-09-27 |
JPS6139748B2 JPS6139748B2 (en) | 1986-09-05 |
Family
ID=12169287
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2555977A Granted JPS53110479A (en) | 1977-03-09 | 1977-03-09 | Production of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53110479A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55111178A (en) * | 1979-02-20 | 1980-08-27 | Mitsubishi Electric Corp | Field-effect semiconductor device |
JPS5623781A (en) * | 1979-08-02 | 1981-03-06 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Semiconductor device |
JPS56140662A (en) * | 1980-04-02 | 1981-11-04 | Mitsubishi Electric Corp | Manufacture of field effect semiconductor of insulation gate complementary type |
JPS6367779A (en) * | 1986-09-09 | 1988-03-26 | Toshiba Corp | Insulated-gate transistor and manufacture of same |
-
1977
- 1977-03-09 JP JP2555977A patent/JPS53110479A/en active Granted
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55111178A (en) * | 1979-02-20 | 1980-08-27 | Mitsubishi Electric Corp | Field-effect semiconductor device |
JPS5623781A (en) * | 1979-08-02 | 1981-03-06 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Semiconductor device |
JPS56140662A (en) * | 1980-04-02 | 1981-11-04 | Mitsubishi Electric Corp | Manufacture of field effect semiconductor of insulation gate complementary type |
JPH0312475B2 (en) * | 1980-04-02 | 1991-02-20 | Mitsubishi Electric Corp | |
JPS6367779A (en) * | 1986-09-09 | 1988-03-26 | Toshiba Corp | Insulated-gate transistor and manufacture of same |
Also Published As
Publication number | Publication date |
---|---|
JPS6139748B2 (en) | 1986-09-05 |
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