JPS53110479A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS53110479A
JPS53110479A JP2555977A JP2555977A JPS53110479A JP S53110479 A JPS53110479 A JP S53110479A JP 2555977 A JP2555977 A JP 2555977A JP 2555977 A JP2555977 A JP 2555977A JP S53110479 A JPS53110479 A JP S53110479A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
making possible
alignment
high speed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2555977A
Other languages
Japanese (ja)
Other versions
JPS6139748B2 (en
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2555977A priority Critical patent/JPS53110479A/en
Publication of JPS53110479A publication Critical patent/JPS53110479A/en
Publication of JPS6139748B2 publication Critical patent/JPS6139748B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Weting (AREA)

Abstract

PURPOSE: To reduce element size by making possible mutual self-alignment of gate electrodes, source and drain diffused and buried insulation layers, making possible high speed operation by reducing junction capacity and preventing disconnection by flattening substrate surface.
COPYRIGHT: (C)1978,JPO&Japio
JP2555977A 1977-03-09 1977-03-09 Production of semiconductor device Granted JPS53110479A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2555977A JPS53110479A (en) 1977-03-09 1977-03-09 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2555977A JPS53110479A (en) 1977-03-09 1977-03-09 Production of semiconductor device

Publications (2)

Publication Number Publication Date
JPS53110479A true JPS53110479A (en) 1978-09-27
JPS6139748B2 JPS6139748B2 (en) 1986-09-05

Family

ID=12169287

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2555977A Granted JPS53110479A (en) 1977-03-09 1977-03-09 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS53110479A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55111178A (en) * 1979-02-20 1980-08-27 Mitsubishi Electric Corp Field-effect semiconductor device
JPS5623781A (en) * 1979-08-02 1981-03-06 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor device
JPS56140662A (en) * 1980-04-02 1981-11-04 Mitsubishi Electric Corp Manufacture of field effect semiconductor of insulation gate complementary type
JPS6367779A (en) * 1986-09-09 1988-03-26 Toshiba Corp Insulated-gate transistor and manufacture of same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55111178A (en) * 1979-02-20 1980-08-27 Mitsubishi Electric Corp Field-effect semiconductor device
JPS5623781A (en) * 1979-08-02 1981-03-06 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor device
JPS56140662A (en) * 1980-04-02 1981-11-04 Mitsubishi Electric Corp Manufacture of field effect semiconductor of insulation gate complementary type
JPH0312475B2 (en) * 1980-04-02 1991-02-20 Mitsubishi Electric Corp
JPS6367779A (en) * 1986-09-09 1988-03-26 Toshiba Corp Insulated-gate transistor and manufacture of same

Also Published As

Publication number Publication date
JPS6139748B2 (en) 1986-09-05

Similar Documents

Publication Publication Date Title
JPS5284981A (en) Production of insulated gate type semiconductor device
JPS5681972A (en) Mos type field effect transistor
JPS53110479A (en) Production of semiconductor device
JPS5713764A (en) Charge detector
JPS52113684A (en) Semiconductor device
JPS53149771A (en) Mis-type semiconductor device and its manufacture
JPS5346288A (en) Mis type semiconductor device
JPS5261960A (en) Production of semiconductor device
JPS5379378A (en) Semoconductor davice and its production
JPS5366179A (en) Semiconductor device
JPS5283071A (en) Production of semiconductor device
JPS5376771A (en) Insulated gate type field effect transistor
JPS52127181A (en) Insulated gate type filed effect transistor
JPS5225582A (en) Production method of semiconductor device
JPS5516480A (en) Insulating gate electrostatic effect transistor and semiconductor integrated circuit device
JPS53144686A (en) Production of semiconductor device
JPS5286779A (en) Semiconductor device
JPS5412566A (en) Production of semiconductor device
JPS5339088A (en) Insulated gate type field effect semiconductor device
JPS5347781A (en) Production of silicon gate semiconductor device
JPS5312278A (en) Production of mos type semiconductor device
JPS544579A (en) Production of mos type semiconductor devices
JPS5530873A (en) High withstand field-effect transistor of mis type
JPS5272186A (en) Production of mis type semiconductor device
JPS53108280A (en) Semiconductor device