JPS5740973A - Inverter circuit and manufacture therefor - Google Patents

Inverter circuit and manufacture therefor

Info

Publication number
JPS5740973A
JPS5740973A JP55116559A JP11655980A JPS5740973A JP S5740973 A JPS5740973 A JP S5740973A JP 55116559 A JP55116559 A JP 55116559A JP 11655980 A JP11655980 A JP 11655980A JP S5740973 A JPS5740973 A JP S5740973A
Authority
JP
Japan
Prior art keywords
layer
region
resistance element
oxygen
ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55116559A
Other languages
Japanese (ja)
Inventor
Yoshihisa Mizutani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55116559A priority Critical patent/JPS5740973A/en
Publication of JPS5740973A publication Critical patent/JPS5740973A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body

Abstract

PURPOSE:To provide an inverter circuit which enables high integration using resistance element as load, by a method wherein an island-shaped semiconductor layer is separated to upper and lower layers by an insulation layer, and the lower part is used as a resistance element while a transistor is provided in the upper part, which are connected with each other. CONSTITUTION:An island-shaped N type silicon layer 3 which is insulated at the circumference by a field oxide film 2 is formed on a sapphire substrate 1, and an oxygen-ion layer 5 is formed therein. Then heat treatment is applied to make the oxygen ion injected layer react with silicon to yield SiO2 forming an insulation layer 6 to separate a lower silicon layer region 3 as a resistance element and an upper silicon layer region 32. The regions 31 and 32 are connected as one part by the portion 33 where oxygen-ion was not injected. Then a gate oxide film 7 is formed, and after forming a P type channel region 8 in the region 32, a gate terminal 9 is formed. Then an N<+> type source 10 and drain 11 are formed in the region 32 to make an MOS-transistor.
JP55116559A 1980-08-25 1980-08-25 Inverter circuit and manufacture therefor Pending JPS5740973A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55116559A JPS5740973A (en) 1980-08-25 1980-08-25 Inverter circuit and manufacture therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55116559A JPS5740973A (en) 1980-08-25 1980-08-25 Inverter circuit and manufacture therefor

Publications (1)

Publication Number Publication Date
JPS5740973A true JPS5740973A (en) 1982-03-06

Family

ID=14690102

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55116559A Pending JPS5740973A (en) 1980-08-25 1980-08-25 Inverter circuit and manufacture therefor

Country Status (1)

Country Link
JP (1) JPS5740973A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5893282A (en) * 1981-11-30 1983-06-02 Seiko Epson Corp Thin film semiconductor element
JPH08368U (en) * 1992-02-07 1996-02-20 日本電子株式会社 Frequency generation method for NMR apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5893282A (en) * 1981-11-30 1983-06-02 Seiko Epson Corp Thin film semiconductor element
JPH08368U (en) * 1992-02-07 1996-02-20 日本電子株式会社 Frequency generation method for NMR apparatus

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