JPS56147469A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56147469A
JPS56147469A JP5078880A JP5078880A JPS56147469A JP S56147469 A JPS56147469 A JP S56147469A JP 5078880 A JP5078880 A JP 5078880A JP 5078880 A JP5078880 A JP 5078880A JP S56147469 A JPS56147469 A JP S56147469A
Authority
JP
Japan
Prior art keywords
polycrystalline
layer
constitution
drain
coated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5078880A
Other languages
Japanese (ja)
Inventor
Shoji Ariizumi
Makoto Segawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP5078880A priority Critical patent/JPS56147469A/en
Priority to US06/187,794 priority patent/US4453175A/en
Priority to EP80105584A priority patent/EP0029099A3/en
Publication of JPS56147469A publication Critical patent/JPS56147469A/en
Priority to US07/111,136 priority patent/US4907057A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/764—Air gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)

Abstract

PURPOSE:To obtain a static RAM which is compact and of high performance by providing a high-resistance polycrystalline Si layer in the current path which is a different system from the current path having an insulated-gate type FET as an element, and directly connecting one end of said layer to the surface of either a source or drain. CONSTITUTION:P type Si 1 is provided with a field oxide film, and a gate oxide film 3 is selectively opened to selectively laminate polycrystalline Si 6'. an N<+> source and drain 7 and 8 are formed by impurity diffusion, and the layer 6' is made conductive. This is coated with an insulating film 12, which is opened 13, and polycrystalline Si 15 is laminated thereon, into which P ions of given concentration are implanted and which is photoetched to form high-resistance layers 15 and 15'. This is coated with SiO2 18, which is selectively opened 16 and then, wirings 14, 17 and 18 are formed. By said constitution, the process can be simplified, and the element can be made more minute. Moreover, capacitance can be balanced without lowering the switching speed, and it is possible to obtain an RAM of largely reduced power consumption.
JP5078880A 1979-09-19 1980-04-17 Semiconductor device Pending JPS56147469A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP5078880A JPS56147469A (en) 1980-04-17 1980-04-17 Semiconductor device
US06/187,794 US4453175A (en) 1979-09-19 1980-09-16 MOS Static RAM layout with polysilicon resistors over FET gates
EP80105584A EP0029099A3 (en) 1979-09-19 1980-09-17 Semiconductor memory device
US07/111,136 US4907057A (en) 1979-09-19 1987-10-19 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5078880A JPS56147469A (en) 1980-04-17 1980-04-17 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS56147469A true JPS56147469A (en) 1981-11-16

Family

ID=12868544

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5078880A Pending JPS56147469A (en) 1979-09-19 1980-04-17 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56147469A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61168955A (en) * 1985-01-22 1986-07-30 Nec Corp Semiconductor device
JPH0214567A (en) * 1989-05-24 1990-01-18 Hitachi Ltd Semiconductor integrated circuit device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61168955A (en) * 1985-01-22 1986-07-30 Nec Corp Semiconductor device
JPH0214567A (en) * 1989-05-24 1990-01-18 Hitachi Ltd Semiconductor integrated circuit device

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