JPS6461061A - A-si thin film transistor - Google Patents
A-si thin film transistorInfo
- Publication number
- JPS6461061A JPS6461061A JP21934787A JP21934787A JPS6461061A JP S6461061 A JPS6461061 A JP S6461061A JP 21934787 A JP21934787 A JP 21934787A JP 21934787 A JP21934787 A JP 21934787A JP S6461061 A JPS6461061 A JP S6461061A
- Authority
- JP
- Japan
- Prior art keywords
- film
- approx
- source
- thin film
- thick
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title abstract 3
- 239000010408 film Substances 0.000 abstract 9
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 2
- 229910052593 corundum Inorganic materials 0.000 abstract 2
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
Abstract
PURPOSE:To reduce a current between a drain and a source at the time of nonapplying a gate voltage by employing as a gate insulating film of a thin film transistor having an a-Si layer an Al2O3 film between source, drain electrodes S, D and a gate electrode G. CONSTITUTION:A drain electrode D and a source electrode S are formed in thickness of approx. 1000Angstrom on a glass substrate 1. To form an ohmic contact between an a-Si thin film 3 and source, drain electrodes S, D, ohmic contact layers 2s, 2d made of n<+> type a-Si film are laminated approx. 300-500Angstrom thick. Further, the film 3 as an active layer is formed approx. 1000Angstrom thick. An Al2O3 film is formed as a gate insulating film 4 approx. 1000-1500Angstrom thick on the film 3. A gate electrode G is formed on the film 4. Then, in order to diffuse aluminum in the film 3, it is annealed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21934787A JPS6461061A (en) | 1987-09-01 | 1987-09-01 | A-si thin film transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21934787A JPS6461061A (en) | 1987-09-01 | 1987-09-01 | A-si thin film transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6461061A true JPS6461061A (en) | 1989-03-08 |
Family
ID=16734027
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP21934787A Pending JPS6461061A (en) | 1987-09-01 | 1987-09-01 | A-si thin film transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6461061A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5208476A (en) * | 1990-06-08 | 1993-05-04 | Seiko Epson Corporation | Low leakage current offset-gate thin film transistor structure |
US5347146A (en) * | 1991-12-30 | 1994-09-13 | Goldstar Co., Ltd. | Polysilicon thin film transistor of a liquid crystal display |
CN100442532C (en) * | 1992-07-06 | 2008-12-10 | 株式会社半导体能源研究所 | Semiconductor device and method for forming the same |
-
1987
- 1987-09-01 JP JP21934787A patent/JPS6461061A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5208476A (en) * | 1990-06-08 | 1993-05-04 | Seiko Epson Corporation | Low leakage current offset-gate thin film transistor structure |
US5347146A (en) * | 1991-12-30 | 1994-09-13 | Goldstar Co., Ltd. | Polysilicon thin film transistor of a liquid crystal display |
CN100442532C (en) * | 1992-07-06 | 2008-12-10 | 株式会社半导体能源研究所 | Semiconductor device and method for forming the same |
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