JPS5515229A - Semiconductor photograph device - Google Patents

Semiconductor photograph device

Info

Publication number
JPS5515229A
JPS5515229A JP8798878A JP8798878A JPS5515229A JP S5515229 A JPS5515229 A JP S5515229A JP 8798878 A JP8798878 A JP 8798878A JP 8798878 A JP8798878 A JP 8798878A JP S5515229 A JPS5515229 A JP S5515229A
Authority
JP
Japan
Prior art keywords
gate
lt
gt
layer
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8798878A
Other versions
JPS6149822B2 (en
Inventor
Junichi Nishizawa
Original Assignee
Semiconductor Res Found
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Res Found filed Critical Semiconductor Res Found
Priority to JP53087988A priority Critical patent/JPS6149822B2/ja
Priority claimed from US06/039,445 external-priority patent/US4427990A/en
Publication of JPS5515229A publication Critical patent/JPS5515229A/en
Publication of JPS6149822B2 publication Critical patent/JPS6149822B2/ja
Priority claimed from US07/332,441 external-priority patent/US5019876A/en
Application status is Expired legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14679Junction field effect transistor [JFET] imagers; static induction transistor [SIT] imagers

Abstract

PURPOSE:To obtain a photo device by making use of a gate region as a light detector having an amplifier operation for an accummulation region, with a junction- type FET or a static conduction thin transistor SIT operated as a photo cell. CONSTITUTION:A n<+> drain 3 surrounded with a n<-> layer 2 is prepared on a p-type substrate and n<-> epi-layer 4 is laminated thereon. In a n<-> layer 4 a P<+> gate 5, a N<+> source 6 and electrode 7 are laminated. A gate electrode 9 is made by covering a transparent insulation film 8. When the electrode 7 and 9 are reverse-biased, a channel is pinched off and a potential partition is controlled with a drain voltage. A capacitance C1 between the electrode 9 and 5 is set substantially equal to a capacitance C2 between the layer 5 and 6 by selecting the thickness of the film 8 and a potential variation DELTAV of the gate 5 due to a charge DELTAQ stored in the gate by light ionization depends upon C1+C2. Therefore, the total capacitance is restricted not to be too great. The source and drain gate are as predetermined connected to a matrix crosspoint made of a plurality of vertical and transverse lines, a photograph device with a high sensibility can be obtained by using the drain current having a considerably great variation compared with the variation in the gate voltage.
JP53087988A 1978-07-18 1978-07-18 Expired JPS6149822B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53087988A JPS6149822B2 (en) 1978-07-18 1978-07-18

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP53087988A JPS6149822B2 (en) 1978-07-18 1978-07-18
US06/039,445 US4427990A (en) 1978-07-14 1979-05-15 Semiconductor photo-electric converter with insulated gate over p-n charge storage region
US07/332,441 US5019876A (en) 1978-07-14 1989-04-04 Semiconductor photo-electric converter

Publications (2)

Publication Number Publication Date
JPS5515229A true JPS5515229A (en) 1980-02-02
JPS6149822B2 JPS6149822B2 (en) 1986-10-31

Family

ID=13930187

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53087988A Expired JPS6149822B2 (en) 1978-07-18 1978-07-18

Country Status (1)

Country Link
JP (1) JPS6149822B2 (en)

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5735369A (en) * 1980-08-11 1982-02-25 Mitsubishi Electric Corp Semiconductor device
JPS57136361A (en) * 1981-02-17 1982-08-23 Semiconductor Energy Lab Co Ltd Semiconductor device
JPS58112867U (en) * 1982-01-26 1983-08-02
EP0096725A1 (en) * 1981-12-17 1983-12-28 NISHIZAWA, Junichi Semiconductor image pick-up device
DE3345189A1 (en) * 1982-12-14 1984-06-14 Olympus Optical Co Solid-photographing converter
DE3345190A1 (en) * 1982-12-14 1984-06-14 Olympus Optical Co Solid-photographing conversion element
DE3345175A1 (en) * 1982-12-14 1984-06-14 Olympus Optical Co Solid-photographing conversion element
DE3344637A1 (en) * 1982-12-11 1984-06-14 Nishizawa Junichi Photoelectric semiconductor converter
EP0111346A2 (en) * 1982-12-13 1984-06-20 NISHIZAWA, Junichi One-dimensional semiconductor imaging device
JPS59108346A (en) * 1982-12-14 1984-06-22 Fuji Photo Film Co Ltd Manufacture of solid-state image pickup device
EP0111880A2 (en) * 1982-12-13 1984-06-27 NISHIZAWA, Junichi Semiconductor image device
DE3407038A1 (en) * 1983-02-28 1984-08-30 Nishizawa Junichi Semiconductor photodetector and method for its drive
JPS59158680A (en) * 1983-03-01 1984-09-08 Fuji Photo Film Co Ltd Solid-state image pickup device
EP0118568A1 (en) * 1982-09-09 1984-09-19 NISHIZAWA, Junichi Semiconductor image pickup device
JPS6012760A (en) * 1983-07-02 1985-01-23 Tadahiro Omi Photoelectric conversion device
JPS6058781A (en) * 1983-09-09 1985-04-04 Olympus Optical Co Ltd Solid-state image pickup device
JPS60105272A (en) * 1983-11-14 1985-06-10 Olympus Optical Co Ltd Solid-state image pickup device
FR2557729A1 (en) * 1983-12-28 1985-07-05 Olympus Optical Co Semiconductor photoelectric converter device
US4857981A (en) * 1986-07-03 1989-08-15 Olympus Optical Co., Ltd. Semiconductor imaging device
JPH0340467A (en) * 1990-07-02 1991-02-21 Canon Inc Photoelectric conversion device
JPH0340570A (en) * 1990-07-02 1991-02-21 Canon Inc Method of refreshing phototransistor
JPH0340574A (en) * 1990-07-02 1991-02-21 Canon Inc Photoelectric converter

Cited By (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5735369A (en) * 1980-08-11 1982-02-25 Mitsubishi Electric Corp Semiconductor device
JPS57136361A (en) * 1981-02-17 1982-08-23 Semiconductor Energy Lab Co Ltd Semiconductor device
EP0096725A1 (en) * 1981-12-17 1983-12-28 NISHIZAWA, Junichi Semiconductor image pick-up device
EP0096725A4 (en) * 1981-12-17 1985-07-01 Fuji Photo Film Co Ltd Semiconductor image pick-up device.
JPS58112867U (en) * 1982-01-26 1983-08-02
EP0118568A4 (en) * 1982-09-09 1985-12-19 Fuji Photo Film Co Ltd Semiconductor image pickup device.
EP0118568A1 (en) * 1982-09-09 1984-09-19 NISHIZAWA, Junichi Semiconductor image pickup device
DE3344637A1 (en) * 1982-12-11 1984-06-14 Nishizawa Junichi Photoelectric semiconductor converter
EP0111346A3 (en) * 1982-12-13 1985-10-09 Nishizawa, Jun-Ichi One-dimensional semiconductor imaging device
EP0111880A2 (en) * 1982-12-13 1984-06-27 NISHIZAWA, Junichi Semiconductor image device
EP0111880A3 (en) * 1982-12-13 1985-12-18 Nishizawa, Jun-Ichi Semiconductor image device
EP0111346A2 (en) * 1982-12-13 1984-06-20 NISHIZAWA, Junichi One-dimensional semiconductor imaging device
DE3345190A1 (en) * 1982-12-14 1984-06-14 Olympus Optical Co Solid-photographing conversion element
US4684968A (en) * 1982-12-14 1987-08-04 Olympus Optical Co., Ltd. JFET imager having light sensing inversion layer induced by insulator charge
DE3345175A1 (en) * 1982-12-14 1984-06-14 Olympus Optical Co Solid-photographing conversion element
JPS59108346A (en) * 1982-12-14 1984-06-22 Fuji Photo Film Co Ltd Manufacture of solid-state image pickup device
DE3345189A1 (en) * 1982-12-14 1984-06-14 Olympus Optical Co Solid-photographing converter
JPH0475667B2 (en) * 1982-12-14 1992-12-01 Junichi Nishizawa
DE3407038A1 (en) * 1983-02-28 1984-08-30 Nishizawa Junichi Semiconductor photodetector and method for its drive
JPH0458698B2 (en) * 1983-02-28 1992-09-18 Fuji Photo Film Co Ltd
JPS59158551A (en) * 1983-02-28 1984-09-08 Fuji Photo Film Co Ltd Semiconductor photodetector and driving method thereof
JPH0473346B2 (en) * 1983-03-01 1992-11-20 Junichi Nishizawa
JPS59158680A (en) * 1983-03-01 1984-09-08 Fuji Photo Film Co Ltd Solid-state image pickup device
JPH0448025B2 (en) * 1983-07-02 1992-08-05 Canon Kk
JPS6012760A (en) * 1983-07-02 1985-01-23 Tadahiro Omi Photoelectric conversion device
JPS6058781A (en) * 1983-09-09 1985-04-04 Olympus Optical Co Ltd Solid-state image pickup device
JPH0453149B2 (en) * 1983-09-09 1992-08-25 Olympus Optical Co
JPS60105272A (en) * 1983-11-14 1985-06-10 Olympus Optical Co Ltd Solid-state image pickup device
FR2557729A1 (en) * 1983-12-28 1985-07-05 Olympus Optical Co Semiconductor photoelectric converter device
US4857981A (en) * 1986-07-03 1989-08-15 Olympus Optical Co., Ltd. Semiconductor imaging device
JPH0449310B2 (en) * 1990-07-02 1992-08-11 Canon Kk
JPH0449309B2 (en) * 1990-07-02 1992-08-11 Canon Kk
JPH0449311B2 (en) * 1990-07-02 1992-08-11 Canon Kk
JPH0340467A (en) * 1990-07-02 1991-02-21 Canon Inc Photoelectric conversion device
JPH0340574A (en) * 1990-07-02 1991-02-21 Canon Inc Photoelectric converter
JPH0340570A (en) * 1990-07-02 1991-02-21 Canon Inc Method of refreshing phototransistor

Also Published As

Publication number Publication date
JPS6149822B2 (en) 1986-10-31

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