JPS5613779A - Photoelectric converter and its preparation - Google Patents

Photoelectric converter and its preparation

Info

Publication number
JPS5613779A
JPS5613779A JP9009979A JP9009979A JPS5613779A JP S5613779 A JPS5613779 A JP S5613779A JP 9009979 A JP9009979 A JP 9009979A JP 9009979 A JP9009979 A JP 9009979A JP S5613779 A JPS5613779 A JP S5613779A
Authority
JP
Japan
Prior art keywords
electrodes
transparent
electrode
layer
electromotive force
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9009979A
Other languages
Japanese (ja)
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP9009979A priority Critical patent/JPS5613779A/en
Publication of JPS5613779A publication Critical patent/JPS5613779A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Energy (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To integrate an entire system and reduce the costs of a device by forming plural first electrodes of the same shape on an insulating substrate, depositing a semiconductor layer with generates light electromotive force over the electrodes, covering the layer with a transparent second electrode and providing a reverse current preventing diode on the same substrate. CONSTITUTION:On an insulating substrate 1 consisting of a glass-epoxy composite material, etc., plural first electrodes 2 with a two-layer construction of Cr and Al are formed, while a monocrystalline, polycrystalline or amorphous semiconductor layer 3 with junctions of PN, PIN, etc. is deposited all over the surface for generating light electromotive force and the entire surface is covered with a transparent second electrode 4. Then the electrodes 2 are divided into separate regions by etching, both end electrodes 2 are used for first and second bus lines 5 and 9, the part between them is used for photoelectric converters 6 and 7, excepting one part of them being used for a reverse current preventing diode 8. The devices 6 and 7 are connected in series, and 7 and 8 are connected.
JP9009979A 1979-07-16 1979-07-16 Photoelectric converter and its preparation Pending JPS5613779A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9009979A JPS5613779A (en) 1979-07-16 1979-07-16 Photoelectric converter and its preparation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9009979A JPS5613779A (en) 1979-07-16 1979-07-16 Photoelectric converter and its preparation

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP59074256A Division JPS60100483A (en) 1984-04-13 1984-04-13 Photoelectric converter
JP2092739A Division JPH031577A (en) 1990-04-06 1990-04-06 Photoelectric converter

Publications (1)

Publication Number Publication Date
JPS5613779A true JPS5613779A (en) 1981-02-10

Family

ID=13989067

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9009979A Pending JPS5613779A (en) 1979-07-16 1979-07-16 Photoelectric converter and its preparation

Country Status (1)

Country Link
JP (1) JPS5613779A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4456782A (en) * 1981-03-20 1984-06-26 Fuji Electric Co., Ltd. Solar cell device
JPS61256375A (en) * 1985-05-10 1986-11-13 シチズン時計株式会社 Thin film diode for display unit
US4645866A (en) * 1984-08-18 1987-02-24 Kyocera Corporation Photovoltaic device and a method of producing the same
EP0213910A2 (en) 1985-08-24 1987-03-11 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device free from the current leakage through a semi-conductor layer
US4663494A (en) * 1984-07-19 1987-05-05 Sanyo Electric Co., Ltd. Photovoltaic device
JPS6367772A (en) * 1986-09-09 1988-03-26 Fuji Xerox Co Ltd Image sensor and manufacture of same
JPH0271566A (en) * 1987-10-28 1990-03-12 Kanegafuchi Chem Ind Co Ltd Mos type fet gate drive solar cell array
JPH0491482A (en) * 1990-08-01 1992-03-24 Mitsubishi Electric Corp Manufacture of solar cell
JPH04130671A (en) * 1990-09-20 1992-05-01 Sanyo Electric Co Ltd Photovoltaic device
US5155565A (en) * 1988-02-05 1992-10-13 Minnesota Mining And Manufacturing Company Method for manufacturing an amorphous silicon thin film solar cell and Schottky diode on a common substrate

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4456782A (en) * 1981-03-20 1984-06-26 Fuji Electric Co., Ltd. Solar cell device
US4663494A (en) * 1984-07-19 1987-05-05 Sanyo Electric Co., Ltd. Photovoltaic device
US4645866A (en) * 1984-08-18 1987-02-24 Kyocera Corporation Photovoltaic device and a method of producing the same
JPS61256375A (en) * 1985-05-10 1986-11-13 シチズン時計株式会社 Thin film diode for display unit
EP0213910A2 (en) 1985-08-24 1987-03-11 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device free from the current leakage through a semi-conductor layer
JPS6367772A (en) * 1986-09-09 1988-03-26 Fuji Xerox Co Ltd Image sensor and manufacture of same
JPH0271566A (en) * 1987-10-28 1990-03-12 Kanegafuchi Chem Ind Co Ltd Mos type fet gate drive solar cell array
US5155565A (en) * 1988-02-05 1992-10-13 Minnesota Mining And Manufacturing Company Method for manufacturing an amorphous silicon thin film solar cell and Schottky diode on a common substrate
JPH0491482A (en) * 1990-08-01 1992-03-24 Mitsubishi Electric Corp Manufacture of solar cell
JPH04130671A (en) * 1990-09-20 1992-05-01 Sanyo Electric Co Ltd Photovoltaic device

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