JPS5613777A - Photoelectric converter - Google Patents

Photoelectric converter

Info

Publication number
JPS5613777A
JPS5613777A JP9009779A JP9009779A JPS5613777A JP S5613777 A JPS5613777 A JP S5613777A JP 9009779 A JP9009779 A JP 9009779A JP 9009779 A JP9009779 A JP 9009779A JP S5613777 A JPS5613777 A JP S5613777A
Authority
JP
Japan
Prior art keywords
electrodes
layer
insulating substrate
bus lines
reverse current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9009779A
Other languages
Japanese (ja)
Other versions
JPH0261158B2 (en
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP9009779A priority Critical patent/JPS5613777A/en
Publication of JPS5613777A publication Critical patent/JPS5613777A/en
Publication of JPH0261158B2 publication Critical patent/JPH0261158B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

PURPOSE:To make a device into a matrix and integrate an entire system by providing separately conductive electrodes and a semiconductor layer which lies on the electrodes on an insulating substrate and using them for connecting with bus lines, for photoelectric converters and for a reverse current preventing diode. CONSTITUTION:On an insulating substrate 1 consisting of methacrylic resin or glass-epoxy composite material, plural conductive electrodes 2 with a two-layer construction of Cr and Al are formed, a monocrystalline, polycrystalline or amorphous semiconductor layer 3 is deposited all over the surface by doping impurities, producing junctions of PN, PIN, etc., in the layer 3 and the entire surface is covered with a transparent electrode layer 4. Next, the electrodes 2 are divided into independent electrodes with the layers 3 and 4 on their surfaces by etching, both end electrodes are used for connecting with first and second bus lines 5 and 9, while electrodes between them are used for photoelectric converters 6 and 7, and a device 8 contacting the 7 is used for a reverse current preventing diode. At this time, the devices 6 and 7 are connected in series, and the device 7 is connected with the device 8.
JP9009779A 1979-07-16 1979-07-16 Photoelectric converter Granted JPS5613777A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9009779A JPS5613777A (en) 1979-07-16 1979-07-16 Photoelectric converter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9009779A JPS5613777A (en) 1979-07-16 1979-07-16 Photoelectric converter

Publications (2)

Publication Number Publication Date
JPS5613777A true JPS5613777A (en) 1981-02-10
JPH0261158B2 JPH0261158B2 (en) 1990-12-19

Family

ID=13989009

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9009779A Granted JPS5613777A (en) 1979-07-16 1979-07-16 Photoelectric converter

Country Status (1)

Country Link
JP (1) JPS5613777A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57204179A (en) * 1981-06-09 1982-12-14 Sanyo Electric Co Ltd Manufacture of photoelectromotive force device
JPS58125864A (en) * 1982-01-22 1983-07-27 Oki Electric Ind Co Ltd Manufacture of line sensor
JPS59103383A (en) * 1982-12-03 1984-06-14 Sanyo Electric Co Ltd Manufacture for photovoltaic force generating device
JPS59108373A (en) * 1982-12-14 1984-06-22 Semiconductor Energy Lab Co Ltd Photoelectric converter
US4456782A (en) * 1981-03-20 1984-06-26 Fuji Electric Co., Ltd. Solar cell device
JPS59121982A (en) * 1982-12-28 1984-07-14 Matsushita Electric Works Ltd Solar cell device
JPS59123281A (en) * 1982-12-28 1984-07-17 Sanyo Electric Co Ltd Manufacture of photosemiconductor device
JPS59125849U (en) * 1983-02-10 1984-08-24 カシオ計算機株式会社 solar cells
EP0213910A2 (en) 1985-08-24 1987-03-11 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device free from the current leakage through a semi-conductor layer
JP2008227476A (en) * 2007-02-15 2008-09-25 Semiconductor Energy Lab Co Ltd Photoelectric conversion device, electronic equipment, and method of producing the photoelectric conversion device
JP2010034539A (en) * 2008-06-26 2010-02-12 Semiconductor Energy Lab Co Ltd Photoelectric conversion module and manufacturing method of the photoelectric conversion device module

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51141587A (en) * 1975-05-30 1976-12-06 Sharp Kk Method of producing solar battery
JPS52133169U (en) * 1976-04-02 1977-10-08
JPS545689A (en) * 1977-06-15 1979-01-17 Sharp Corp Manufacture of solar battery device
JPS5423489A (en) * 1977-07-25 1979-02-22 Japan Solar Energy Solar optical generator
JPS54150473U (en) * 1978-04-11 1979-10-19
JPS554994A (en) * 1978-06-20 1980-01-14 Siemens Ag Solar battery and method of manufacturing same

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51141587A (en) * 1975-05-30 1976-12-06 Sharp Kk Method of producing solar battery
JPS52133169U (en) * 1976-04-02 1977-10-08
JPS545689A (en) * 1977-06-15 1979-01-17 Sharp Corp Manufacture of solar battery device
JPS5423489A (en) * 1977-07-25 1979-02-22 Japan Solar Energy Solar optical generator
JPS54150473U (en) * 1978-04-11 1979-10-19
JPS554994A (en) * 1978-06-20 1980-01-14 Siemens Ag Solar battery and method of manufacturing same

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4456782A (en) * 1981-03-20 1984-06-26 Fuji Electric Co., Ltd. Solar cell device
JPS57204179A (en) * 1981-06-09 1982-12-14 Sanyo Electric Co Ltd Manufacture of photoelectromotive force device
JPS6349910B2 (en) * 1982-01-22 1988-10-06 Oki Electric Ind Co Ltd
JPS58125864A (en) * 1982-01-22 1983-07-27 Oki Electric Ind Co Ltd Manufacture of line sensor
JPS59103383A (en) * 1982-12-03 1984-06-14 Sanyo Electric Co Ltd Manufacture for photovoltaic force generating device
JPS59108373A (en) * 1982-12-14 1984-06-22 Semiconductor Energy Lab Co Ltd Photoelectric converter
JPS59123281A (en) * 1982-12-28 1984-07-17 Sanyo Electric Co Ltd Manufacture of photosemiconductor device
JPS59121982A (en) * 1982-12-28 1984-07-14 Matsushita Electric Works Ltd Solar cell device
JPS59125849U (en) * 1983-02-10 1984-08-24 カシオ計算機株式会社 solar cells
EP0213910A2 (en) 1985-08-24 1987-03-11 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device free from the current leakage through a semi-conductor layer
JP2008227476A (en) * 2007-02-15 2008-09-25 Semiconductor Energy Lab Co Ltd Photoelectric conversion device, electronic equipment, and method of producing the photoelectric conversion device
US8592936B2 (en) 2007-02-15 2013-11-26 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and electronic device, and method for manufacturing photoelectric conversion device
JP2010034539A (en) * 2008-06-26 2010-02-12 Semiconductor Energy Lab Co Ltd Photoelectric conversion module and manufacturing method of the photoelectric conversion device module

Also Published As

Publication number Publication date
JPH0261158B2 (en) 1990-12-19

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