JPS5691459A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5691459A
JPS5691459A JP16866379A JP16866379A JPS5691459A JP S5691459 A JPS5691459 A JP S5691459A JP 16866379 A JP16866379 A JP 16866379A JP 16866379 A JP16866379 A JP 16866379A JP S5691459 A JPS5691459 A JP S5691459A
Authority
JP
Japan
Prior art keywords
resistance
dispersion
resistance element
semiconductor substrate
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16866379A
Other languages
Japanese (ja)
Other versions
JPS6248904B2 (en
Inventor
Toru Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP16866379A priority Critical patent/JPS5691459A/en
Publication of JPS5691459A publication Critical patent/JPS5691459A/en
Publication of JPS6248904B2 publication Critical patent/JPS6248904B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/8605—Resistors with PN junctions

Abstract

PURPOSE:To obtain a resistance element of high resistance value without increasing area of occupancy, by forming a dispersion resistance on an indented surface provided on a semiconductor substrate and then forming a resistance element of amorphous layer overlapping the dispersion layer horizontally through an insulation layer. CONSTITUTION:An indentation is provided in surface region on a semiconductor substrate 1, and a dispersion resistance element connecting surface of this indentation to the surface region is formed by a P type regions 2 and 3. Further, an ion injection resistance 8 is formed on an amorphous silicon layer 4 through an insulation layer 7 in the surface region of the semiconductor substrate 1. And one end of the aforementioned dispersion resistance element is connected to one end of the ion injection resistance 8 by aluminum 9' forming a resistance element which directly connects the dispersion resistance of the P type regions 2 and 3 to the injection resistance 8 for the amorphous silicon layer 4. At the same time, aluminum electrodes 9 are formed on both ends of this resistance element to obtain a both-end electrode of series connection resistance.
JP16866379A 1979-12-25 1979-12-25 Semiconductor device Granted JPS5691459A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16866379A JPS5691459A (en) 1979-12-25 1979-12-25 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16866379A JPS5691459A (en) 1979-12-25 1979-12-25 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5691459A true JPS5691459A (en) 1981-07-24
JPS6248904B2 JPS6248904B2 (en) 1987-10-16

Family

ID=15872186

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16866379A Granted JPS5691459A (en) 1979-12-25 1979-12-25 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5691459A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4633288A (en) * 1982-07-16 1986-12-30 Siemens Aktiengesellschaft Light-triggerable thyristor having low light power requirement and high critical voltage rise rate
JPH04151810A (en) * 1990-10-15 1992-05-25 Matsushita Electric Works Ltd Planar transformer
US5316978A (en) * 1993-03-25 1994-05-31 Northern Telecom Limited Forming resistors for intergrated circuits

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4633288A (en) * 1982-07-16 1986-12-30 Siemens Aktiengesellschaft Light-triggerable thyristor having low light power requirement and high critical voltage rise rate
JPH04151810A (en) * 1990-10-15 1992-05-25 Matsushita Electric Works Ltd Planar transformer
US5316978A (en) * 1993-03-25 1994-05-31 Northern Telecom Limited Forming resistors for intergrated circuits

Also Published As

Publication number Publication date
JPS6248904B2 (en) 1987-10-16

Similar Documents

Publication Publication Date Title
JPS5477081A (en) Semiconductor device and production of the same
JPS5324789A (en) Production of semiconductor device
JPS5756958A (en) Semiconductor device
JPS5691459A (en) Semiconductor device
JPS55154762A (en) Semiconductor memory
JPS5544743A (en) Manufacture of semiconductor device
JPS5658253A (en) Capacitor for integrated circuit
JPS56126971A (en) Thin film field effect element
JPS5656664A (en) Hybrid integrated circuit
JPS55125645A (en) Production of semiconductor device
JPS55160455A (en) Manufacture of insulated gate type field effect semiconductor device
JPS5548972A (en) Insulation gate type electric field effective transistor
JPS5610954A (en) Semiconductor device
JPS55148422A (en) Manufacturing of semiconductor device
JPS577976A (en) Photo electromotive force element
JPS55110056A (en) Semiconductor device
JPS55160456A (en) Semiconductor device
JPS5646558A (en) Semiconductor device
GB1518459A (en) Charge coupled image sensor devices
JPS5778181A (en) Semiconductor variable capacity element
JPS6477158A (en) Memory device
JPS5591868A (en) Charge transfer device
JPS551179A (en) Complementary mis integrated circuit apparatus
JPS5354989A (en) Semiconductor device
JPS52144288A (en) Preparation of electrode in semiconductor device