JPS5548972A - Insulation gate type electric field effective transistor - Google Patents

Insulation gate type electric field effective transistor

Info

Publication number
JPS5548972A
JPS5548972A JP12890179A JP12890179A JPS5548972A JP S5548972 A JPS5548972 A JP S5548972A JP 12890179 A JP12890179 A JP 12890179A JP 12890179 A JP12890179 A JP 12890179A JP S5548972 A JPS5548972 A JP S5548972A
Authority
JP
Japan
Prior art keywords
source
electrode
drain
film
poly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12890179A
Other languages
Japanese (ja)
Other versions
JPS5636586B2 (en
Inventor
Isao Yoshida
Minoru Nagata
Seiji Kubo
Toshiaki Masuhara
Tanetoshi Miura
Shinichi Ohashi
Masaya Oota
Shinsuke Iguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12890179A priority Critical patent/JPS5548972A/en
Publication of JPS5548972A publication Critical patent/JPS5548972A/en
Publication of JPS5636586B2 publication Critical patent/JPS5636586B2/ja
Granted legal-status Critical Current

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  • Non-Volatile Memory (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To lower ON resistance of large output capacity by providing, on an n-type substrate a source (or a drain) whose bottom end contacts the base board, extending its take-out electrode onto a gate electrode through an insulation film and taking out a drain electrode (or a source electrode) from rear side of the substrate. CONSTITUTION:A p-type poly Si layer 10 and a single-crystal layer 1 are formed by selectively arranging a poly Si film on an n-type Si base board 3. And then, an n<+> source 2 is prepared by piling a thermal oxide film 4' and a poly Si 8', boring openings 15 and 16 to be covered with PSG 11 and conducting heat-treatment. A layer 10 becomes an n<+> drain. And then, electrodes 6 and 9 for a source and a gate, respectively, by providing an opening 17 on the film 11 and soldering Al, and a drain electrode 7 is taken out from the rear side through the base board 3. This mechanism enables the source 2 to take a net-like shape, reduces the source resistance and largely increases output current per unit area. And further, as a source field effect lowers pinch-off voltage, it is advantageous as a high pressure- resistance structure.
JP12890179A 1979-10-08 1979-10-08 Insulation gate type electric field effective transistor Granted JPS5548972A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12890179A JPS5548972A (en) 1979-10-08 1979-10-08 Insulation gate type electric field effective transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12890179A JPS5548972A (en) 1979-10-08 1979-10-08 Insulation gate type electric field effective transistor

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP49052224A Division JPS50152676A (en) 1974-05-13 1974-05-13

Publications (2)

Publication Number Publication Date
JPS5548972A true JPS5548972A (en) 1980-04-08
JPS5636586B2 JPS5636586B2 (en) 1981-08-25

Family

ID=14996150

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12890179A Granted JPS5548972A (en) 1979-10-08 1979-10-08 Insulation gate type electric field effective transistor

Country Status (1)

Country Link
JP (1) JPS5548972A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5321295A (en) * 1989-04-28 1994-06-14 Mitsubishi Denki Kabushiki Kaisha Insulated gate bipolar transistor and method of fabricating the same
US5682048A (en) * 1995-05-19 1997-10-28 Nissan Motor Co., Ltd. Groove-type semiconductor device
US6037633A (en) * 1996-11-01 2000-03-14 Nissan Motor Co., Ltd. Semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4855673A (en) * 1971-11-12 1973-08-04
JPS4863680A (en) * 1971-11-20 1973-09-04

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4855673A (en) * 1971-11-12 1973-08-04
JPS4863680A (en) * 1971-11-20 1973-09-04

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5321295A (en) * 1989-04-28 1994-06-14 Mitsubishi Denki Kabushiki Kaisha Insulated gate bipolar transistor and method of fabricating the same
US5682048A (en) * 1995-05-19 1997-10-28 Nissan Motor Co., Ltd. Groove-type semiconductor device
US6037633A (en) * 1996-11-01 2000-03-14 Nissan Motor Co., Ltd. Semiconductor device

Also Published As

Publication number Publication date
JPS5636586B2 (en) 1981-08-25

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