JPS5727052A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5727052A
JPS5727052A JP10278880A JP10278880A JPS5727052A JP S5727052 A JPS5727052 A JP S5727052A JP 10278880 A JP10278880 A JP 10278880A JP 10278880 A JP10278880 A JP 10278880A JP S5727052 A JPS5727052 A JP S5727052A
Authority
JP
Japan
Prior art keywords
region
emitter
base
electrode
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10278880A
Other languages
Japanese (ja)
Inventor
Shinichi Akashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP10278880A priority Critical patent/JPS5727052A/en
Publication of JPS5727052A publication Critical patent/JPS5727052A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration

Abstract

PURPOSE:To simplify structure by separating a low resistance layer connected so that the joined sections of emitter regions and base regions short-circuit from an emitter electrode. CONSTITUTION:With a transistor at an initial stage, a base electrode 22 is connected to the emitter region 23 through the base region 12, and the emitter electrode 21 is connected to a base electrode 20 of a transistor at the next stage and the emitter region 23. A convex region 10 is formed to the emitter region 13 of the transistor at the next stage, a base push-in region 19, one part thereof is continued to the base region 12, is shaped into the convex region 10, a joined section of the region 19 and the convex region 10 is short-circuited by the low resistance layer 18, and a base electrode 16 and the emitter electrode 15 are formed in an insulating film 14 so as to selectively ohmic-contacts with each region of a base and an emitter. Accordingly, malfunction and breakdown can be prevented even when excessive inverse voltage is applied between collectors and emitters.
JP10278880A 1980-07-25 1980-07-25 Semiconductor device Pending JPS5727052A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10278880A JPS5727052A (en) 1980-07-25 1980-07-25 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10278880A JPS5727052A (en) 1980-07-25 1980-07-25 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5727052A true JPS5727052A (en) 1982-02-13

Family

ID=14336858

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10278880A Pending JPS5727052A (en) 1980-07-25 1980-07-25 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5727052A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5839060A (en) * 1981-09-02 1983-03-07 Toshiba Corp Semiconductor device
JP2009225570A (en) * 2008-03-17 2009-10-01 Fuji Electric Holdings Co Ltd Power conversion device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5839060A (en) * 1981-09-02 1983-03-07 Toshiba Corp Semiconductor device
JPH0224022B2 (en) * 1981-09-02 1990-05-28 Tokyo Shibaura Electric Co
JP2009225570A (en) * 2008-03-17 2009-10-01 Fuji Electric Holdings Co Ltd Power conversion device

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