JPS57206062A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS57206062A
JPS57206062A JP9143681A JP9143681A JPS57206062A JP S57206062 A JPS57206062 A JP S57206062A JP 9143681 A JP9143681 A JP 9143681A JP 9143681 A JP9143681 A JP 9143681A JP S57206062 A JPS57206062 A JP S57206062A
Authority
JP
Japan
Prior art keywords
type region
type
electrode
transistor
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9143681A
Other languages
Japanese (ja)
Inventor
Masashi Jinmon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9143681A priority Critical patent/JPS57206062A/en
Publication of JPS57206062A publication Critical patent/JPS57206062A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To prevent dielectric destruction of an oxide film in a capacitor wherein an electrode is provided on an insulator layer covering an N<+> type region formed on a P type substrate by a method wherein N-P-N type transistor is built to act as an electrode. CONSTITUTION:An N type region 2 is formed on a P type substrate and an N<+> type region 3 is formed in the N type region 2. An electrode 6 is formed across an oxide film 4 on an N type region 3, and a capacitance is created between electrodes 5 and 6 connected with an N<+> type region. A P type region 7 is provided in an N type region 2 and an N<+> type region 8 is provided in the P type region 7, and an electrode 6 is connected to the N<+> type region 8. The N type region 3, P type region 7, and the N<+> type region 8 constitute an N-P-N transistor. The transistor, inserted between the electrodes 5 and 6, clamps a surge voltage at a collector/emitter yield voltage.
JP9143681A 1981-06-12 1981-06-12 Semiconductor integrated circuit Pending JPS57206062A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9143681A JPS57206062A (en) 1981-06-12 1981-06-12 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9143681A JPS57206062A (en) 1981-06-12 1981-06-12 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS57206062A true JPS57206062A (en) 1982-12-17

Family

ID=14026311

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9143681A Pending JPS57206062A (en) 1981-06-12 1981-06-12 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS57206062A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4633291A (en) * 1983-03-01 1986-12-30 Tokyo Shibaura Denki Kabushiki Kaisha High-gain semiconductor device with capacitive coupling
US4636833A (en) * 1983-03-18 1987-01-13 Hitachi, Ltd. Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4633291A (en) * 1983-03-01 1986-12-30 Tokyo Shibaura Denki Kabushiki Kaisha High-gain semiconductor device with capacitive coupling
US4636833A (en) * 1983-03-18 1987-01-13 Hitachi, Ltd. Semiconductor device

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