JPS5542365A - Junction destructive write type semiconductor memory unit - Google Patents
Junction destructive write type semiconductor memory unitInfo
- Publication number
- JPS5542365A JPS5542365A JP11580378A JP11580378A JPS5542365A JP S5542365 A JPS5542365 A JP S5542365A JP 11580378 A JP11580378 A JP 11580378A JP 11580378 A JP11580378 A JP 11580378A JP S5542365 A JPS5542365 A JP S5542365A
- Authority
- JP
- Japan
- Prior art keywords
- junction
- emitter
- base
- collector
- base junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/06—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using diode elements
Abstract
PURPOSE:To make it possible to prevent the destruction of collector-base junction by lowering a write voltage by thinning an insulating film near the exposed emitter- base junction. CONSTITUTION:By part of oxide film 8 passivating a semiconductor surface, oxide film 8 near exposed emitter-base junction on a base region surface is thinned to form thin film 8a, on which electrode 9a is provided. Applying this electrode with a voltage inducing several carriers in a base region restrains the expansion of a depletion layer from the emitter-base junction to the base side in write-voltage application, thereby lowering the dielectric strength of the part. Therefore, the emitter junction can be destroyed at a stage the collector-base junction is never destroyed and a short circuit between the emitter and collector which is formed by writing can be prevented.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11580378A JPS5542365A (en) | 1978-09-22 | 1978-09-22 | Junction destructive write type semiconductor memory unit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11580378A JPS5542365A (en) | 1978-09-22 | 1978-09-22 | Junction destructive write type semiconductor memory unit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5542365A true JPS5542365A (en) | 1980-03-25 |
Family
ID=14671462
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11580378A Pending JPS5542365A (en) | 1978-09-22 | 1978-09-22 | Junction destructive write type semiconductor memory unit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5542365A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4507756A (en) * | 1982-03-23 | 1985-03-26 | Texas Instruments Incorporated | Avalanche fuse element as programmable device |
US4507757A (en) * | 1982-03-23 | 1985-03-26 | Texas Instruments Incorporated | Avalanche fuse element in programmable memory |
-
1978
- 1978-09-22 JP JP11580378A patent/JPS5542365A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4507756A (en) * | 1982-03-23 | 1985-03-26 | Texas Instruments Incorporated | Avalanche fuse element as programmable device |
US4507757A (en) * | 1982-03-23 | 1985-03-26 | Texas Instruments Incorporated | Avalanche fuse element in programmable memory |
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