JPS57147275A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS57147275A JPS57147275A JP3298381A JP3298381A JPS57147275A JP S57147275 A JPS57147275 A JP S57147275A JP 3298381 A JP3298381 A JP 3298381A JP 3298381 A JP3298381 A JP 3298381A JP S57147275 A JPS57147275 A JP S57147275A
- Authority
- JP
- Japan
- Prior art keywords
- polysilicon
- oxidized film
- semiconductor substrate
- hole
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 5
- 229920005591 polysilicon Polymers 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 2
- 239000012212 insulator Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To increase the cut off frequency of a semiconductor device by effectively utilizing the region directly under the active region of a transistor and deleting a P-N junction region having larger capacity of insulators of non-active region as much as possible, thereby reducing the effective capacity. CONSTITUTION:An oxidized film 2 having more than two holes and a polysilicon 17 are formed on the main surface of a semiconductor substrate 1. In this case, an oxidized film 18 is formed at the inside of one hole, and the polysilicon 17 is deivided on a semiconductor substrate 1. One of the divided polysilicon 17 is used as a base electrode, and other polysilicon 17 is used as an emitter electrode. An oxidized film is not formed at the other hole, but the polysilicon 17 is used as the collector electrode as it is. Externally connecting electrodes 14-16 are formed at the respective electrodes 17.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3298381A JPS57147275A (en) | 1981-03-05 | 1981-03-05 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3298381A JPS57147275A (en) | 1981-03-05 | 1981-03-05 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57147275A true JPS57147275A (en) | 1982-09-11 |
Family
ID=12374108
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3298381A Pending JPS57147275A (en) | 1981-03-05 | 1981-03-05 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57147275A (en) |
-
1981
- 1981-03-05 JP JP3298381A patent/JPS57147275A/en active Pending
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