JPS5543881A - Small-signal transistor - Google Patents

Small-signal transistor

Info

Publication number
JPS5543881A
JPS5543881A JP11721978A JP11721978A JPS5543881A JP S5543881 A JPS5543881 A JP S5543881A JP 11721978 A JP11721978 A JP 11721978A JP 11721978 A JP11721978 A JP 11721978A JP S5543881 A JPS5543881 A JP S5543881A
Authority
JP
Japan
Prior art keywords
region
base
emitter region
semiconductor
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11721978A
Other languages
Japanese (ja)
Inventor
Ikunori Takada
Keiji Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP11721978A priority Critical patent/JPS5543881A/en
Publication of JPS5543881A publication Critical patent/JPS5543881A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To obtain low-noise characteristics with a smaller chip area, by reducing the concentration of an impurity to be added to a semiconductor crystal and separating the junction away from a high impurity concentration region.
CONSTITUTION: Collector region 1 and base region 2 are the same as in conventional devices. But, emitter region 3 consists of many narrow band-shaped regions. Base electrode 6 is the same as in conventional devices. But, emitter region 7 is pulled out on an insulator formed on the semiconductor base, and a part of it forms a wire-bonding region. In this way, the base region and the emitter region are formed in the semiconductor chip and exposed on one of its main surfaces; the depth of the base region is more than 2μm and the emitter region occupies an area more than 1/10 of the chip area; and the electrode bonding region connected to the emitter region is placed on the insulator which is provided on one main surface of the semiconductor chip.
COPYRIGHT: (C)1980,JPO&Japio
JP11721978A 1978-09-21 1978-09-21 Small-signal transistor Pending JPS5543881A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11721978A JPS5543881A (en) 1978-09-21 1978-09-21 Small-signal transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11721978A JPS5543881A (en) 1978-09-21 1978-09-21 Small-signal transistor

Publications (1)

Publication Number Publication Date
JPS5543881A true JPS5543881A (en) 1980-03-27

Family

ID=14706335

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11721978A Pending JPS5543881A (en) 1978-09-21 1978-09-21 Small-signal transistor

Country Status (1)

Country Link
JP (1) JPS5543881A (en)

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