JPS5244576A - Process for production of semiconductor device - Google Patents
Process for production of semiconductor deviceInfo
- Publication number
- JPS5244576A JPS5244576A JP50121035A JP12103575A JPS5244576A JP S5244576 A JPS5244576 A JP S5244576A JP 50121035 A JP50121035 A JP 50121035A JP 12103575 A JP12103575 A JP 12103575A JP S5244576 A JPS5244576 A JP S5244576A
- Authority
- JP
- Japan
- Prior art keywords
- production
- semiconductor device
- decrease
- improving
- width
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE: To reduce the width of the effective base region of semiconductor devices such as lateral transistors and decrease its impurity concentration, thereby improving the efficiency of minority carrier injection and increasing current amplification factor.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50121035A JPS5244576A (en) | 1975-10-07 | 1975-10-07 | Process for production of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50121035A JPS5244576A (en) | 1975-10-07 | 1975-10-07 | Process for production of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5244576A true JPS5244576A (en) | 1977-04-07 |
Family
ID=14801196
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50121035A Pending JPS5244576A (en) | 1975-10-07 | 1975-10-07 | Process for production of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5244576A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54119342U (en) * | 1978-02-10 | 1979-08-21 | ||
US7811664B2 (en) | 2005-04-19 | 2010-10-12 | E. I. Du Pont De Nemours And Company | Fluororesin coating film |
US11879066B2 (en) | 2016-07-27 | 2024-01-23 | The Chemours Company Fc, Llc | Fluororesin coating composition for forming a topcoat and coating film therefrom |
-
1975
- 1975-10-07 JP JP50121035A patent/JPS5244576A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54119342U (en) * | 1978-02-10 | 1979-08-21 | ||
US7811664B2 (en) | 2005-04-19 | 2010-10-12 | E. I. Du Pont De Nemours And Company | Fluororesin coating film |
US11879066B2 (en) | 2016-07-27 | 2024-01-23 | The Chemours Company Fc, Llc | Fluororesin coating composition for forming a topcoat and coating film therefrom |
US11970628B2 (en) | 2016-07-27 | 2024-04-30 | The Chemours Company Fc, Llc | Fluororesin coating composition for forming a topcoat and coating film therefrom |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS51128268A (en) | Semiconductor unit | |
JPS5247383A (en) | Semiconductor device | |
JPS5244576A (en) | Process for production of semiconductor device | |
JPS5274280A (en) | Semiconductor device and its production | |
JPS5265686A (en) | Production of mos semiconductor device | |
JPS5265679A (en) | Semiconductor device | |
JPS5248978A (en) | Process for production of semiconductor device | |
JPS5214377A (en) | Semiconductor device | |
JPS53107279A (en) | Semiconductor device | |
JPS5261967A (en) | Production of semiconductor device | |
JPS5263066A (en) | Production of semiconductor device | |
JPS5231676A (en) | Production method of semiconductor device | |
JPS5273673A (en) | Production of semiconductor device | |
JPS5316587A (en) | Semiconductor device | |
JPS5224475A (en) | Planar thyristor process | |
JPS5261956A (en) | Production of semiconductor device | |
JPS5234675A (en) | Manufacturing process of semiconductor device | |
JPS5382276A (en) | Production of semiconductor device | |
JPS5217768A (en) | Production method of semi-conductor device | |
JPS5248480A (en) | Vertical junction type field effect transistor | |
JPS54586A (en) | Production of semiconductor device | |
JPS5228867A (en) | Process for formation of pn junction | |
JPS51113470A (en) | Semiconductor device | |
JPS5214390A (en) | Iii-v compound semiconductor device and its process for fabrication | |
JPS5396770A (en) | Production of mis transistor |