JPS5231676A - Production method of semiconductor device - Google Patents

Production method of semiconductor device

Info

Publication number
JPS5231676A
JPS5231676A JP9923475A JP9923475A JPS5231676A JP S5231676 A JPS5231676 A JP S5231676A JP 9923475 A JP9923475 A JP 9923475A JP 9923475 A JP9923475 A JP 9923475A JP S5231676 A JPS5231676 A JP S5231676A
Authority
JP
Japan
Prior art keywords
semiconductor device
production method
diffusing
impurity
produce
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9923475A
Other languages
Japanese (ja)
Inventor
Koji Ito
Tamikazu Hosoi
Kenji Hirakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP9923475A priority Critical patent/JPS5231676A/en
Publication of JPS5231676A publication Critical patent/JPS5231676A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To produce a bipolar transistor with high current amplification factor, by means of controlling the surface concentration of P to a specified value using P and Al as the impurity thereby diffusing it.
COPYRIGHT: (C)1977,JPO&Japio
JP9923475A 1975-08-14 1975-08-14 Production method of semiconductor device Pending JPS5231676A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9923475A JPS5231676A (en) 1975-08-14 1975-08-14 Production method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9923475A JPS5231676A (en) 1975-08-14 1975-08-14 Production method of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5231676A true JPS5231676A (en) 1977-03-10

Family

ID=14241978

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9923475A Pending JPS5231676A (en) 1975-08-14 1975-08-14 Production method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5231676A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4987282A (en) * 1972-08-21 1974-08-21

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4987282A (en) * 1972-08-21 1974-08-21

Similar Documents

Publication Publication Date Title
JPS51128268A (en) Semiconductor unit
JPS51127681A (en) Manufacturing process of semiconductor device
JPS5240062A (en) Process for production of semiconductor devices
JPS5247383A (en) Semiconductor device
JPS51118395A (en) Semiconductor emitting unit and manufacturing process
JPS5231676A (en) Production method of semiconductor device
JPS5244576A (en) Process for production of semiconductor device
JPS5228879A (en) Semiconductor device and method for its production
JPS5227354A (en) Impurity diffusion method for iii-v group compound semiconductor region
JPS5231677A (en) Production method of semiconductor device
JPS5219081A (en) Production method of semiconductor device
JPS5265679A (en) Semiconductor device
JPS54586A (en) Production of semiconductor device
JPS52129275A (en) Impurity diffusion method
JPS52154343A (en) Production of semiconductor device
JPS5217768A (en) Production method of semi-conductor device
JPS5234667A (en) Semiconductor device
JPS52179A (en) Method of fabricating semiconductor
JPS5370666A (en) Production of semiconductor device
JPS533171A (en) Impurity diffusion method
JPS5231690A (en) Productin method of semiconductor device
JPS52178A (en) Pnp transistor
JPS51126036A (en) Semi-conductor crystal growth method
JPS5228885A (en) Method for production of semiconductive emitter device
JPS5255876A (en) Production of semiconductor device