JPS53107279A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS53107279A JPS53107279A JP2238777A JP2238777A JPS53107279A JP S53107279 A JPS53107279 A JP S53107279A JP 2238777 A JP2238777 A JP 2238777A JP 2238777 A JP2238777 A JP 2238777A JP S53107279 A JPS53107279 A JP S53107279A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- emitter
- letting
- recombination
- directing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To achieve the increase in current amplification factor by reducing the recombination of minority carriers injected from emitter and letting the directing the carries going for directions other than lateral direction from the emitter toward collector.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2238777A JPS53107279A (en) | 1977-03-01 | 1977-03-01 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2238777A JPS53107279A (en) | 1977-03-01 | 1977-03-01 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS53107279A true JPS53107279A (en) | 1978-09-19 |
Family
ID=12081237
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2238777A Pending JPS53107279A (en) | 1977-03-01 | 1977-03-01 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53107279A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5596675A (en) * | 1979-01-19 | 1980-07-23 | Nec Corp | Semiconductor device |
JPS56155545A (en) * | 1980-05-02 | 1981-12-01 | Nec Corp | Semiconductor device |
JPS57120365A (en) * | 1981-01-19 | 1982-07-27 | Nec Corp | Semiconductor device |
-
1977
- 1977-03-01 JP JP2238777A patent/JPS53107279A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5596675A (en) * | 1979-01-19 | 1980-07-23 | Nec Corp | Semiconductor device |
JPS56155545A (en) * | 1980-05-02 | 1981-12-01 | Nec Corp | Semiconductor device |
JPS6344305B2 (en) * | 1980-05-02 | 1988-09-05 | Nippon Electric Co | |
JPS57120365A (en) * | 1981-01-19 | 1982-07-27 | Nec Corp | Semiconductor device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS51126761A (en) | Schottky barrier type semi-conductor unit | |
JPS5380542A (en) | Protective device of gate turn off thyristor | |
JPS53107279A (en) | Semiconductor device | |
JPS5230389A (en) | Thyristor | |
JPS53108380A (en) | Semiconductor device | |
JPS51132973A (en) | Semiconductor device | |
JPS538570A (en) | Semiconductor device | |
JPS5211872A (en) | Semiconductor device | |
JPS577978A (en) | Opto-electronic switch | |
JPS5368174A (en) | Lateral transistor | |
JPS5245294A (en) | Semiconductor device | |
JPS5244576A (en) | Process for production of semiconductor device | |
JPS5353255A (en) | Manufacture of semiconductor device | |
JPS5382276A (en) | Production of semiconductor device | |
JPS5353254A (en) | Semiconductor device | |
JPS5390769A (en) | Semiconductor device | |
JPS5432986A (en) | Semiconductor device | |
JPS53122377A (en) | Semiconductor device | |
JPS5221774A (en) | Producing system for transistor | |
JPS533071A (en) | Semiconductor device | |
JPS5440574A (en) | Manufacture of semiconductor device | |
JPS5214377A (en) | Semiconductor device | |
JPS5412683A (en) | Semiconductor device | |
JPS5326583A (en) | Semiconductor device | |
JPS5388579A (en) | Production of semiconductor device |