JPS5412683A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5412683A JPS5412683A JP7804077A JP7804077A JPS5412683A JP S5412683 A JPS5412683 A JP S5412683A JP 7804077 A JP7804077 A JP 7804077A JP 7804077 A JP7804077 A JP 7804077A JP S5412683 A JPS5412683 A JP S5412683A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- density
- bipolar element
- dielectricstrength
- integration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 230000010354 integration Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
- H01L27/0244—I2L structures integrated in combination with analog structures
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Logic Circuits (AREA)
Abstract
PURPOSE:To secure an integration between high-speed I<2>L and high dielectricstrength bipolar element, by increasing the emitter layer density of the I<2>L inverter higher than the density of the collector layer of the normal bipolar element.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP52078040A JPS5854509B2 (en) | 1977-06-30 | 1977-06-30 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP52078040A JPS5854509B2 (en) | 1977-06-30 | 1977-06-30 | Manufacturing method of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5412683A true JPS5412683A (en) | 1979-01-30 |
JPS5854509B2 JPS5854509B2 (en) | 1983-12-05 |
Family
ID=13650706
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP52078040A Expired JPS5854509B2 (en) | 1977-06-30 | 1977-06-30 | Manufacturing method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5854509B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5748651U (en) * | 1980-09-02 | 1982-03-18 |
-
1977
- 1977-06-30 JP JP52078040A patent/JPS5854509B2/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5748651U (en) * | 1980-09-02 | 1982-03-18 |
Also Published As
Publication number | Publication date |
---|---|
JPS5854509B2 (en) | 1983-12-05 |
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