JPS53127271A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS53127271A JPS53127271A JP4289377A JP4289377A JPS53127271A JP S53127271 A JPS53127271 A JP S53127271A JP 4289377 A JP4289377 A JP 4289377A JP 4289377 A JP4289377 A JP 4289377A JP S53127271 A JPS53127271 A JP S53127271A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- base
- region
- iebo
- icbo
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To improve the characteristics of IEBO, ICBO, and hFE, by covering the surface of the base region other than an emitter region with a high impurity concentration layer of the same conduction type as the base.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4289377A JPS53127271A (en) | 1977-04-13 | 1977-04-13 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4289377A JPS53127271A (en) | 1977-04-13 | 1977-04-13 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS53127271A true JPS53127271A (en) | 1978-11-07 |
Family
ID=12648703
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4289377A Pending JPS53127271A (en) | 1977-04-13 | 1977-04-13 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53127271A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5516469A (en) * | 1978-07-21 | 1980-02-05 | Nec Corp | Method of producing semiconductor device |
-
1977
- 1977-04-13 JP JP4289377A patent/JPS53127271A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5516469A (en) * | 1978-07-21 | 1980-02-05 | Nec Corp | Method of producing semiconductor device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS51128269A (en) | Semiconductor unit | |
JPS543479A (en) | Semiconductor device and its manufacture | |
JPS5395571A (en) | Semiconductor device | |
JPS5247383A (en) | Semiconductor device | |
JPS5353979A (en) | Transistor | |
JPS53127271A (en) | Semiconductor device | |
JPS5366384A (en) | Thyristor | |
JPS52129380A (en) | Semiconductor device | |
JPS5396666A (en) | Manufacture of semiconductor device with pn junction | |
JPS5228868A (en) | Semiconductor device | |
JPS538570A (en) | Semiconductor device | |
JPS51123071A (en) | Fabrication technique of semiconductor device | |
JPS51127685A (en) | Lateral-type semiconductor device | |
JPS53125774A (en) | Bipolar transistor and its manufacture | |
JPS53145580A (en) | Pnp transistor | |
JPS533071A (en) | Semiconductor device | |
JPS5214377A (en) | Semiconductor device | |
JPS51114084A (en) | Semiconductor device | |
JPS5321582A (en) | Mos type semiconductor device | |
JPS5412572A (en) | Production of semiconductor device | |
JPS5247683A (en) | Semiconductor device | |
JPS5373979A (en) | Transistor device | |
JPS5369585A (en) | Semiconductor device | |
JPS53140975A (en) | Semiconductor device | |
JPS52178A (en) | Pnp transistor |