JPS52104082A - Semiconductor unit - Google Patents
Semiconductor unitInfo
- Publication number
- JPS52104082A JPS52104082A JP2089376A JP2089376A JPS52104082A JP S52104082 A JPS52104082 A JP S52104082A JP 2089376 A JP2089376 A JP 2089376A JP 2089376 A JP2089376 A JP 2089376A JP S52104082 A JPS52104082 A JP S52104082A
- Authority
- JP
- Japan
- Prior art keywords
- emitter
- base
- semiconductor unit
- conjuction
- obtaining
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To provide a layer to reduce the carrier injection from the emitter on the emitter/base conjuction surface except the specified area immediately under the collector region, thus obtaining a I<2>L of which effective emitter/base conjunction and which has an improved inverter current amplifying ratio and greater shield frequency to ensure high speed operation.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2089376A JPS52104082A (en) | 1976-02-27 | 1976-02-27 | Semiconductor unit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2089376A JPS52104082A (en) | 1976-02-27 | 1976-02-27 | Semiconductor unit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS52104082A true JPS52104082A (en) | 1977-09-01 |
JPS5540192B2 JPS5540192B2 (en) | 1980-10-16 |
Family
ID=12039892
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2089376A Granted JPS52104082A (en) | 1976-02-27 | 1976-02-27 | Semiconductor unit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52104082A (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3274477D1 (en) * | 1982-06-11 | 1987-01-15 | Egide Jozef Debremaeker | Building |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5179591A (en) * | 1975-01-06 | 1976-07-10 | Hitachi Ltd |
-
1976
- 1976-02-27 JP JP2089376A patent/JPS52104082A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5179591A (en) * | 1975-01-06 | 1976-07-10 | Hitachi Ltd |
Also Published As
Publication number | Publication date |
---|---|
JPS5540192B2 (en) | 1980-10-16 |
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