JPS5365076A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5365076A
JPS5365076A JP14085776A JP14085776A JPS5365076A JP S5365076 A JPS5365076 A JP S5365076A JP 14085776 A JP14085776 A JP 14085776A JP 14085776 A JP14085776 A JP 14085776A JP S5365076 A JPS5365076 A JP S5365076A
Authority
JP
Japan
Prior art keywords
semiconductor device
eprestage
darlington
emitter
anode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14085776A
Other languages
Japanese (ja)
Inventor
Haruki Yamashita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP14085776A priority Critical patent/JPS5365076A/en
Publication of JPS5365076A publication Critical patent/JPS5365076A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:Ti insert and form a diode on the same chip and cause high speed switching by connecting th eprestage base of Darlington-connected NPN elements to a cathode and the emitter to an anode.
JP14085776A 1976-11-22 1976-11-22 Semiconductor device Pending JPS5365076A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14085776A JPS5365076A (en) 1976-11-22 1976-11-22 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14085776A JPS5365076A (en) 1976-11-22 1976-11-22 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5365076A true JPS5365076A (en) 1978-06-10

Family

ID=15278342

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14085776A Pending JPS5365076A (en) 1976-11-22 1976-11-22 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5365076A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59110166A (en) * 1982-12-15 1984-06-26 Sansha Electric Mfg Co Ltd Darlington transistor
JPH01300560A (en) * 1988-05-27 1989-12-05 Matsushita Electron Corp Semiconductor device and manufacture thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59110166A (en) * 1982-12-15 1984-06-26 Sansha Electric Mfg Co Ltd Darlington transistor
JPH0236061B2 (en) * 1982-12-15 1990-08-15 Sansha Electric Mfg Co Ltd
JPH01300560A (en) * 1988-05-27 1989-12-05 Matsushita Electron Corp Semiconductor device and manufacture thereof

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