JPS5275991A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5275991A
JPS5275991A JP50153051A JP15305175A JPS5275991A JP S5275991 A JPS5275991 A JP S5275991A JP 50153051 A JP50153051 A JP 50153051A JP 15305175 A JP15305175 A JP 15305175A JP S5275991 A JPS5275991 A JP S5275991A
Authority
JP
Japan
Prior art keywords
semiconductor device
type
eliminate
combining
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50153051A
Other languages
Japanese (ja)
Inventor
Osamu Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP50153051A priority Critical patent/JPS5275991A/en
Publication of JPS5275991A publication Critical patent/JPS5275991A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To obtain an I<2>L combining a vertical PNP transistor and a lateral NPN transistor, increase its current amplification factor and eliminate the difference in propagation delay time by making a P<+> type semiconductor substrate injector and the part between P type base regions an N<+> type emitter region.
JP50153051A 1975-12-20 1975-12-20 Semiconductor device Pending JPS5275991A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50153051A JPS5275991A (en) 1975-12-20 1975-12-20 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50153051A JPS5275991A (en) 1975-12-20 1975-12-20 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5275991A true JPS5275991A (en) 1977-06-25

Family

ID=15553897

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50153051A Pending JPS5275991A (en) 1975-12-20 1975-12-20 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5275991A (en)

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