JPS5275281A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5275281A
JPS5275281A JP50152516A JP15251675A JPS5275281A JP S5275281 A JPS5275281 A JP S5275281A JP 50152516 A JP50152516 A JP 50152516A JP 15251675 A JP15251675 A JP 15251675A JP S5275281 A JPS5275281 A JP S5275281A
Authority
JP
Japan
Prior art keywords
common
semiconductor device
base
transistor
sollector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50152516A
Other languages
Japanese (ja)
Other versions
JPS5540190B2 (en
Inventor
Takao Nakano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP50152516A priority Critical patent/JPS5275281A/en
Publication of JPS5275281A publication Critical patent/JPS5275281A/en
Publication of JPS5540190B2 publication Critical patent/JPS5540190B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To increase injector efficiency and current amplification factor by providing a buried layer so that the sollector of a common base lateral transistor and the base of a common emitter vertical transistor are made common.
JP50152516A 1975-12-19 1975-12-19 Semiconductor device Granted JPS5275281A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50152516A JPS5275281A (en) 1975-12-19 1975-12-19 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50152516A JPS5275281A (en) 1975-12-19 1975-12-19 Semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP6104779A Division JPS551193A (en) 1979-05-17 1979-05-17 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5275281A true JPS5275281A (en) 1977-06-24
JPS5540190B2 JPS5540190B2 (en) 1980-10-16

Family

ID=15542143

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50152516A Granted JPS5275281A (en) 1975-12-19 1975-12-19 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5275281A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5527697A (en) * 1978-08-11 1980-02-27 Siemens Ag Bipolar semiconductor integrated circuit and method of manufacturing same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56162741U (en) * 1980-05-07 1981-12-03

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5177186A (en) * 1974-12-27 1976-07-03 Tokyo Shibaura Electric Co

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5177186A (en) * 1974-12-27 1976-07-03 Tokyo Shibaura Electric Co

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5527697A (en) * 1978-08-11 1980-02-27 Siemens Ag Bipolar semiconductor integrated circuit and method of manufacturing same

Also Published As

Publication number Publication date
JPS5540190B2 (en) 1980-10-16

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