JPS52154380A - Production of semiconductor integrated circuit - Google Patents

Production of semiconductor integrated circuit

Info

Publication number
JPS52154380A
JPS52154380A JP7095776A JP7095776A JPS52154380A JP S52154380 A JPS52154380 A JP S52154380A JP 7095776 A JP7095776 A JP 7095776A JP 7095776 A JP7095776 A JP 7095776A JP S52154380 A JPS52154380 A JP S52154380A
Authority
JP
Japan
Prior art keywords
production
integrated circuit
semiconductor integrated
increase
pnm
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7095776A
Other languages
Japanese (ja)
Inventor
Masae Oota
Kenji Nishi
Takashi Oda
Yutaka Inaba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP7095776A priority Critical patent/JPS52154380A/en
Publication of JPS52154380A publication Critical patent/JPS52154380A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • H01L27/0237—Integrated injection logic structures [I2L] using vertical injector structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Logic Circuits (AREA)

Abstract

PURPOSE:To increase the concentration of the emitter layer of a PNM transistor, enhance its emitted injection efficiency and increase its hFE.
JP7095776A 1976-06-18 1976-06-18 Production of semiconductor integrated circuit Pending JPS52154380A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7095776A JPS52154380A (en) 1976-06-18 1976-06-18 Production of semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7095776A JPS52154380A (en) 1976-06-18 1976-06-18 Production of semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS52154380A true JPS52154380A (en) 1977-12-22

Family

ID=13446496

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7095776A Pending JPS52154380A (en) 1976-06-18 1976-06-18 Production of semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS52154380A (en)

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