JPS5599767A - Iil type semiconductor device - Google Patents
Iil type semiconductor deviceInfo
- Publication number
- JPS5599767A JPS5599767A JP712779A JP712779A JPS5599767A JP S5599767 A JPS5599767 A JP S5599767A JP 712779 A JP712779 A JP 712779A JP 712779 A JP712779 A JP 712779A JP S5599767 A JPS5599767 A JP S5599767A
- Authority
- JP
- Japan
- Prior art keywords
- emitter
- transfer rate
- regions
- current transfer
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE:To increase the current transfer rate and further to minimize the drop in the current transfer rate due to the increase of the injector current, by making the emitter-collector interface longer than the shorter side of the rectangular base-collector region. CONSTITUTION:In order to lengthen the emitter-collector interface of a lateral PNP-transistor, P-type emitter regions 18A and 18B are formed corresponding to the two shorter sides of rectangular base-emitter region 20, and at the same time, N-type base regions 22A and 22B are fixed. That is, essentially, two PNP-transistors are formed. 28A, 28B indicate the injector contacts corresponding to emitter regions 18A and 18B. Consequently, the emitter-collector interface of the lateral transistor becomes nearly twice as large as that of the conventional device. As a result, injection is operated from both sides of base-emitter region 20 and the current transfer rate is increased.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP712779A JPS5599767A (en) | 1979-01-26 | 1979-01-26 | Iil type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP712779A JPS5599767A (en) | 1979-01-26 | 1979-01-26 | Iil type semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5599767A true JPS5599767A (en) | 1980-07-30 |
| JPS6159536B2 JPS6159536B2 (en) | 1986-12-17 |
Family
ID=11657406
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP712779A Granted JPS5599767A (en) | 1979-01-26 | 1979-01-26 | Iil type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5599767A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6956147B2 (en) | 2019-07-23 | 2021-10-27 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | Semiconductor device manufacturing methods, substrate processing devices and programs |
-
1979
- 1979-01-26 JP JP712779A patent/JPS5599767A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6159536B2 (en) | 1986-12-17 |
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