JPS54162482A - Semiconductor element - Google Patents

Semiconductor element

Info

Publication number
JPS54162482A
JPS54162482A JP7174378A JP7174378A JPS54162482A JP S54162482 A JPS54162482 A JP S54162482A JP 7174378 A JP7174378 A JP 7174378A JP 7174378 A JP7174378 A JP 7174378A JP S54162482 A JPS54162482 A JP S54162482A
Authority
JP
Japan
Prior art keywords
region
current
base region
leak
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7174378A
Other languages
Japanese (ja)
Inventor
Kenichi Yamanaka
Josuke Nakada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7174378A priority Critical patent/JPS54162482A/en
Publication of JPS54162482A publication Critical patent/JPS54162482A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66992—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by the variation of applied heat

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To obtain a heat-sensitive element which has excellent OFF-voltage increase ratio characteristics and whose OFF-current is a little by providing a new region meeting either base region and by making an electric connection between this region and the other region. CONSTITUTION:Meeting base region 2 of the part of PNP transistor Tr, P-type region 8 is formed away from base region 3 of the NPNTr part. This region 8 is so formed that a lot of current will leak to Pn junction J4 between regions 8 and 2. Further, region 8 is connected to region 3 via electrode 5. In this cnstitution, the leak current at junction J4 is amplified and injected as a gate current into base region 3 of the thyristor consisting of regions 1 to 4. Since the leak current varies, especially, with temperature according to an exponential function, the current injected into base region 3 turns the thyristor ON.
JP7174378A 1978-06-13 1978-06-13 Semiconductor element Pending JPS54162482A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7174378A JPS54162482A (en) 1978-06-13 1978-06-13 Semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7174378A JPS54162482A (en) 1978-06-13 1978-06-13 Semiconductor element

Publications (1)

Publication Number Publication Date
JPS54162482A true JPS54162482A (en) 1979-12-24

Family

ID=13469302

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7174378A Pending JPS54162482A (en) 1978-06-13 1978-06-13 Semiconductor element

Country Status (1)

Country Link
JP (1) JPS54162482A (en)

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