JPS56126959A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56126959A
JPS56126959A JP3110980A JP3110980A JPS56126959A JP S56126959 A JPS56126959 A JP S56126959A JP 3110980 A JP3110980 A JP 3110980A JP 3110980 A JP3110980 A JP 3110980A JP S56126959 A JPS56126959 A JP S56126959A
Authority
JP
Japan
Prior art keywords
darlington
trq3
regions
region
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3110980A
Other languages
Japanese (ja)
Other versions
JPS6232625B2 (en
Inventor
Kazumichi Aoki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3110980A priority Critical patent/JPS56126959A/en
Publication of JPS56126959A publication Critical patent/JPS56126959A/en
Publication of JPS6232625B2 publication Critical patent/JPS6232625B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)

Abstract

PURPOSE:To enable the manufacture of a Darlington transistor with one pellet by controlling the current amplification factor of a transistor corresponding to a diode of the Darlington circuit to a low value. CONSTITUTION:A Darlington power transistor Tr is formed of emitter regions 1- 3, a base region 4, a high resistance collector region 5 and a low resistance collector region 6. The regions 1-3 are the emitter regions of the Tr corresponding to TrQ1, TrQ2, TrQ3 in the Darlington circuit, the region 3 is formed shallower than the regions 1, 2, and the current amplification factor of the TrQ3 is formed lower than those of the other Tr. This value should be lower than 3 under the conditions of 5V of collector voltage and 1A of collector current. Consequently, the operation of the TrQ3 approaches the diode characteristics to thus improve the turn-off characteristic. Thus, the Darlington Tr formed of 2 Tr and 1 diode can be formed with one pellet.
JP3110980A 1980-03-12 1980-03-12 Semiconductor device Granted JPS56126959A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3110980A JPS56126959A (en) 1980-03-12 1980-03-12 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3110980A JPS56126959A (en) 1980-03-12 1980-03-12 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS56126959A true JPS56126959A (en) 1981-10-05
JPS6232625B2 JPS6232625B2 (en) 1987-07-15

Family

ID=12322227

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3110980A Granted JPS56126959A (en) 1980-03-12 1980-03-12 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56126959A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02226675A (en) * 1989-02-28 1990-09-10 Sanyo Electric Co Ltd Fixing construction for hybrid integrated circuit

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56112751A (en) * 1980-02-13 1981-09-05 Toshiba Corp Switching element

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56112751A (en) * 1980-02-13 1981-09-05 Toshiba Corp Switching element

Also Published As

Publication number Publication date
JPS6232625B2 (en) 1987-07-15

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