JPS5648172A - Semiconductor switching device for power - Google Patents

Semiconductor switching device for power

Info

Publication number
JPS5648172A
JPS5648172A JP12509279A JP12509279A JPS5648172A JP S5648172 A JPS5648172 A JP S5648172A JP 12509279 A JP12509279 A JP 12509279A JP 12509279 A JP12509279 A JP 12509279A JP S5648172 A JPS5648172 A JP S5648172A
Authority
JP
Japan
Prior art keywords
transistor
base
collector
controlling
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12509279A
Other languages
Japanese (ja)
Inventor
Masahiko Akamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP12509279A priority Critical patent/JPS5648172A/en
Publication of JPS5648172A publication Critical patent/JPS5648172A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action

Abstract

PURPOSE:To obtain a gate-controlled type switching device of good turn-off characteristics by using two transistors and a transistor for gate controlling when controlling a main circuit including a power source and a load. CONSTITUTION:When controlling a main circuit net 100 including a power source 101 and a load 102 with a control means 200, the first transistor 6, the second transistor 5 and a transistor 7 for gate controlling are provided between them. Providing a PNP type transistor and an NPN type transistor whose base and collector are connected with the other's collector and base, the collector and base of the second transistor 5 are connected between the base and emitter of the first transistor 5, and a parallel resistor 8 for reducing accumulating time is connected between the base and emitter of the transistor 5. Further, the transistor 7 for gate controlling is connected between the base and collector of the transistor 6, and between the base and emitter of the transistor 7, a resistor 9 for turn-on trigger input is connected.
JP12509279A 1979-09-27 1979-09-27 Semiconductor switching device for power Pending JPS5648172A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12509279A JPS5648172A (en) 1979-09-27 1979-09-27 Semiconductor switching device for power

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12509279A JPS5648172A (en) 1979-09-27 1979-09-27 Semiconductor switching device for power

Publications (1)

Publication Number Publication Date
JPS5648172A true JPS5648172A (en) 1981-05-01

Family

ID=14901641

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12509279A Pending JPS5648172A (en) 1979-09-27 1979-09-27 Semiconductor switching device for power

Country Status (1)

Country Link
JP (1) JPS5648172A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57118438A (en) * 1980-11-21 1982-07-23 Thomson Csf Switch controllable in on or off with pulse
JPS5850825A (en) * 1981-09-21 1983-03-25 Nec Corp Semiconductor switch circuit
JPS60163759U (en) * 1984-04-05 1985-10-30 株式会社明電舎 Gate turn-off thyristor
JPH03115426U (en) * 1990-03-12 1991-11-28

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5036062A (en) * 1973-07-02 1975-04-04
JPS5190445A (en) * 1975-02-05 1976-08-07

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5036062A (en) * 1973-07-02 1975-04-04
JPS5190445A (en) * 1975-02-05 1976-08-07

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57118438A (en) * 1980-11-21 1982-07-23 Thomson Csf Switch controllable in on or off with pulse
JPS5850825A (en) * 1981-09-21 1983-03-25 Nec Corp Semiconductor switch circuit
JPS60163759U (en) * 1984-04-05 1985-10-30 株式会社明電舎 Gate turn-off thyristor
JPH03115426U (en) * 1990-03-12 1991-11-28

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