JPS5549035A - Semiconductor switch circuit - Google Patents
Semiconductor switch circuitInfo
- Publication number
- JPS5549035A JPS5549035A JP12152778A JP12152778A JPS5549035A JP S5549035 A JPS5549035 A JP S5549035A JP 12152778 A JP12152778 A JP 12152778A JP 12152778 A JP12152778 A JP 12152778A JP S5549035 A JPS5549035 A JP S5549035A
- Authority
- JP
- Japan
- Prior art keywords
- pnpn
- circuit
- current
- equivalent
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
Abstract
PURPOSE:To obtain a switch circuit whose OFF control is easy and which is tolerant of a breakdown even in case of an excessive current load by using a PNPN element with two gates, at least one transistor and at least one diode D. CONSTITUTION:To PNPN element 1 with P and N gates, NPN transistor Tr6 is connected to constitute an equivalent PNPN circuit by one part of element 1 and Tr6. Flowing a current to control terminal C1 turns ON the equivalent PNPN circuit of element 1 and Tr6. Since diode D5 is interposed between the cathode of element 1 and a switch, element 1 does not conducts between anode A and cathode K and the equivalent PNPN circuit turns ON between main switch terminals S1 and S2 and self-holds. From control terminal C2, the base of Tr2 is driven by a current to form a short circuit between the base and emitter or Tr6, so that the equivalent PNPN circuit will turn OFF. Since a current fed positively back to the base of Tr6 from the P gate of element 1 by way of resistance 4 is absorbed by Tr2, a cutt-off current can be increased and an element breakdown can be prevened by D4 and resistance 4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP53121527A JPS585609B2 (en) | 1978-10-04 | 1978-10-04 | semiconductor switch circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP53121527A JPS585609B2 (en) | 1978-10-04 | 1978-10-04 | semiconductor switch circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5549035A true JPS5549035A (en) | 1980-04-08 |
| JPS585609B2 JPS585609B2 (en) | 1983-02-01 |
Family
ID=14813424
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP53121527A Expired JPS585609B2 (en) | 1978-10-04 | 1978-10-04 | semiconductor switch circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS585609B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57112549U (en) * | 1980-12-30 | 1982-07-12 | ||
| US4722861A (en) * | 1986-01-31 | 1988-02-02 | Shimizu Construction Co., Ltd. | Lightweight aggregate having high resistance to water absorption and process for preparation thereof |
| JP2791556B2 (en) * | 1986-08-25 | 1998-08-27 | 利康 鈴木 | Switching circuit |
| DE102009033970B4 (en) * | 2009-07-15 | 2012-05-31 | Heiko Kersten | Erasable thyristor circuit with two gates |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0652705U (en) * | 1992-01-06 | 1994-07-19 | 彌榮子 景山 | Nail clippers and nail jump prevention members |
-
1978
- 1978-10-04 JP JP53121527A patent/JPS585609B2/en not_active Expired
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57112549U (en) * | 1980-12-30 | 1982-07-12 | ||
| JPS6229522Y2 (en) * | 1980-12-30 | 1987-07-29 | ||
| US4722861A (en) * | 1986-01-31 | 1988-02-02 | Shimizu Construction Co., Ltd. | Lightweight aggregate having high resistance to water absorption and process for preparation thereof |
| JP2791556B2 (en) * | 1986-08-25 | 1998-08-27 | 利康 鈴木 | Switching circuit |
| DE102009033970B4 (en) * | 2009-07-15 | 2012-05-31 | Heiko Kersten | Erasable thyristor circuit with two gates |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS585609B2 (en) | 1983-02-01 |
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