JPS54157086A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS54157086A
JPS54157086A JP6618978A JP6618978A JPS54157086A JP S54157086 A JPS54157086 A JP S54157086A JP 6618978 A JP6618978 A JP 6618978A JP 6618978 A JP6618978 A JP 6618978A JP S54157086 A JPS54157086 A JP S54157086A
Authority
JP
Japan
Prior art keywords
collector
emitter
scr
terminal
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6618978A
Other languages
Japanese (ja)
Inventor
Tanasuke Nakada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP6618978A priority Critical patent/JPS54157086A/en
Publication of JPS54157086A publication Critical patent/JPS54157086A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE: To perform overheat protection by providing together a pnpn heat-sensitive switch which detects directly the junction temperature of a transistor and breaks the base current over a prescribed temperature and shunts the emitter electrode.
CONSTITUTION: Heat-sensitive SCR 31 is connected in parallel between base terminal 17' and emitter terminal 18' of Darlington transistor 40. SCR 31 is operated on a basis of a temperature, and the base current is switched to SCR 31, and the collector current is turned off. Then, pn junction 6 of the Zener diode characteristic between p+ emitter layer 21 and n-type collector layer of SCR 31 is connected between terminals 16' and 17'. Since the reverse braekdown voltage is lower than collector junctions 12a and 12b of transistors in the input and the output sides, the break voltage between collector terminal 16' and emitter terminal 18' is determined by the breakdown voltage of diode 6; and when an overvoltage is applied to the Darlington transistor, breakdown current i0 of diode 6 is flowed to base electrode 17a of input transistor 19, thereby preventing the destruction dependent upon the overvoltage between the collector and the emitter.
COPYRIGHT: (C)1979,JPO&Japio
JP6618978A 1978-05-31 1978-05-31 Semiconductor device Pending JPS54157086A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6618978A JPS54157086A (en) 1978-05-31 1978-05-31 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6618978A JPS54157086A (en) 1978-05-31 1978-05-31 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS54157086A true JPS54157086A (en) 1979-12-11

Family

ID=13308640

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6618978A Pending JPS54157086A (en) 1978-05-31 1978-05-31 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS54157086A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5740977A (en) * 1980-08-25 1982-03-06 Nippon Denso Co Ltd Semiconductor device
JPS6265504A (en) * 1985-09-17 1987-03-24 Sanyo Electric Co Ltd Power amplifier

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5740977A (en) * 1980-08-25 1982-03-06 Nippon Denso Co Ltd Semiconductor device
JPH0318336B2 (en) * 1980-08-25 1991-03-12 Nippon Denso Co
JPS6265504A (en) * 1985-09-17 1987-03-24 Sanyo Electric Co Ltd Power amplifier

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