JPS54157086A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS54157086A JPS54157086A JP6618978A JP6618978A JPS54157086A JP S54157086 A JPS54157086 A JP S54157086A JP 6618978 A JP6618978 A JP 6618978A JP 6618978 A JP6618978 A JP 6618978A JP S54157086 A JPS54157086 A JP S54157086A
- Authority
- JP
- Japan
- Prior art keywords
- collector
- emitter
- scr
- terminal
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
- Thyristors (AREA)
Abstract
PURPOSE: To perform overheat protection by providing together a pnpn heat-sensitive switch which detects directly the junction temperature of a transistor and breaks the base current over a prescribed temperature and shunts the emitter electrode.
CONSTITUTION: Heat-sensitive SCR 31 is connected in parallel between base terminal 17' and emitter terminal 18' of Darlington transistor 40. SCR 31 is operated on a basis of a temperature, and the base current is switched to SCR 31, and the collector current is turned off. Then, pn junction 6 of the Zener diode characteristic between p+ emitter layer 21 and n-type collector layer of SCR 31 is connected between terminals 16' and 17'. Since the reverse braekdown voltage is lower than collector junctions 12a and 12b of transistors in the input and the output sides, the break voltage between collector terminal 16' and emitter terminal 18' is determined by the breakdown voltage of diode 6; and when an overvoltage is applied to the Darlington transistor, breakdown current i0 of diode 6 is flowed to base electrode 17a of input transistor 19, thereby preventing the destruction dependent upon the overvoltage between the collector and the emitter.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6618978A JPS54157086A (en) | 1978-05-31 | 1978-05-31 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6618978A JPS54157086A (en) | 1978-05-31 | 1978-05-31 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54157086A true JPS54157086A (en) | 1979-12-11 |
Family
ID=13308640
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6618978A Pending JPS54157086A (en) | 1978-05-31 | 1978-05-31 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54157086A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5740977A (en) * | 1980-08-25 | 1982-03-06 | Nippon Denso Co Ltd | Semiconductor device |
JPS6265504A (en) * | 1985-09-17 | 1987-03-24 | Sanyo Electric Co Ltd | Power amplifier |
-
1978
- 1978-05-31 JP JP6618978A patent/JPS54157086A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5740977A (en) * | 1980-08-25 | 1982-03-06 | Nippon Denso Co Ltd | Semiconductor device |
JPH0318336B2 (en) * | 1980-08-25 | 1991-03-12 | Nippon Denso Co | |
JPS6265504A (en) * | 1985-09-17 | 1987-03-24 | Sanyo Electric Co Ltd | Power amplifier |
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