JPS57111065A - Mos field effect type semiconductor circuit device - Google Patents

Mos field effect type semiconductor circuit device

Info

Publication number
JPS57111065A
JPS57111065A JP55188444A JP18844480A JPS57111065A JP S57111065 A JPS57111065 A JP S57111065A JP 55188444 A JP55188444 A JP 55188444A JP 18844480 A JP18844480 A JP 18844480A JP S57111065 A JPS57111065 A JP S57111065A
Authority
JP
Japan
Prior art keywords
destruction
prevention
diode
film
field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55188444A
Other languages
Japanese (ja)
Inventor
Hideki Takei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP55188444A priority Critical patent/JPS57111065A/en
Publication of JPS57111065A publication Critical patent/JPS57111065A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements

Abstract

PURPOSE:To make a P-N junction diode for prevention of destruction provided in an MOS field effect type semiconductor circuit device to be used both as a field film destruction prevention element by a method wherein the P-N junction diode for prevention of destruction is provided in parallel with a resistor circuit for prevention of destruction connected in series to a gate, and the diode thereof is arranged at the lower part of the field insulating film in a pad region. CONSTITUTION:A P type diffusion layer 7 is provided at the lower part of a field insulating film 2 at the lower part of an input/output terminal 1 to constitute a P-N junction diode for prevention of destruction, and a terminal 5 is provided to constitute also a resistor for prevention of destruction. Accordingly when an abnormal voltage is applied to the input/output terminal, the forward directional or the reverse directional current path of the diode is formed to perform protective action, and a voltage generated during the delay time of operation of the diode is not applied directly to a gate film owing to action of the resistor. Therefore because electric potential difference between the input/output terminal and the substrate at the lower part of the field film is eliminated, destruction of the field film is not generated, and effective utilization of the substrate at the lower part of the pad can be attained to enhance integration.
JP55188444A 1980-12-27 1980-12-27 Mos field effect type semiconductor circuit device Pending JPS57111065A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55188444A JPS57111065A (en) 1980-12-27 1980-12-27 Mos field effect type semiconductor circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55188444A JPS57111065A (en) 1980-12-27 1980-12-27 Mos field effect type semiconductor circuit device

Publications (1)

Publication Number Publication Date
JPS57111065A true JPS57111065A (en) 1982-07-10

Family

ID=16223785

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55188444A Pending JPS57111065A (en) 1980-12-27 1980-12-27 Mos field effect type semiconductor circuit device

Country Status (1)

Country Link
JP (1) JPS57111065A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2556502A1 (en) * 1983-12-07 1985-06-14 Hitachi Ltd GRID PROTECTION DEVICE FOR A SEMICONDUCTOR DEVICE
JPH02297966A (en) * 1989-05-11 1990-12-10 Fuji Electric Co Ltd Field-effect transistor protective structure of integrated circuit device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5289478A (en) * 1976-01-22 1977-07-27 Agency Of Ind Science & Technol Mos integrated circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5289478A (en) * 1976-01-22 1977-07-27 Agency Of Ind Science & Technol Mos integrated circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2556502A1 (en) * 1983-12-07 1985-06-14 Hitachi Ltd GRID PROTECTION DEVICE FOR A SEMICONDUCTOR DEVICE
JPH02297966A (en) * 1989-05-11 1990-12-10 Fuji Electric Co Ltd Field-effect transistor protective structure of integrated circuit device

Similar Documents

Publication Publication Date Title
JPS5493981A (en) Semiconductor device
JPS57111065A (en) Mos field effect type semiconductor circuit device
JPS5753944A (en) Semiconductor integrated circuit
JPS57103355A (en) Mos semiconductor device
JPS5543864A (en) Mis semiconductor device
JPS6467966A (en) Semiconductor device
JPS56147446A (en) Semiconductor integrated circuit device
JPS5491067A (en) Input protective circuit
JPS5667962A (en) Gate protection circuit of mos field effect transistor
JPS57123726A (en) Mis semiconductor device
JPS556847A (en) Semiconductor device
JPS55166953A (en) Semiconductor integrated circuit device
JPS5588372A (en) Lateral type transistor
JPS5541730A (en) Semiconductor device
JPS5740977A (en) Semiconductor device
JPS58210676A (en) Semiconductor device
JPS56165358A (en) Semiconductor device
JPS57177554A (en) Semiconductor integrated circuit device
JPS57106168A (en) Semiconductor device
JPS5565470A (en) Mos integrated circuit
JPS572574A (en) Insulated gate type field effect transistor
JPS54157086A (en) Semiconductor device
JPS57164571A (en) Semiconductro integrated circuit device
JPS55146963A (en) Semiconductor integrated circuit
JPS577966A (en) Semiconductor integrated circuit device