JPS6481410A - Semiconductor switch circuit - Google Patents

Semiconductor switch circuit

Info

Publication number
JPS6481410A
JPS6481410A JP62237112A JP23711287A JPS6481410A JP S6481410 A JPS6481410 A JP S6481410A JP 62237112 A JP62237112 A JP 62237112A JP 23711287 A JP23711287 A JP 23711287A JP S6481410 A JPS6481410 A JP S6481410A
Authority
JP
Japan
Prior art keywords
current
anode
terminal
pnp
reverse current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62237112A
Other languages
Japanese (ja)
Inventor
Yoshitaka Abe
Junjiro Kitano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP62237112A priority Critical patent/JPS6481410A/en
Publication of JPS6481410A publication Critical patent/JPS6481410A/en
Pending legal-status Critical Current

Links

Landscapes

  • Thyristor Switches And Gates (AREA)

Abstract

PURPOSE:To prevent a PNPN switch from turning on erroneously by connecting two outputs of a current switching circuit where when a current flows to one output, no current flows to the other output to a PNP and a NPN transistor(TR) through diodes respectively. CONSTITUTION:The P-N junction between an anode terminal A and an anode gate terminal GA is biased reversely to reduce a leak current flowing to a cathode terminal K. Further, when the voltage at the anode terminal A rises above the collector voltage of a PNP TR Q3 constituting the current switching circuit 3 owing to an external surge, etc., a reverse current preventing diode D1 prevents a current from flowing in the reverse current route of the anode terminal A, anode gate terminal GA, reverse current preventive diode D1, and PNP TR Q5. Thus, no reverse current flows between the anode terminal A and anode gate terminal GA, so the PNPN switch 1 in an off state is prevented from turning on erroneously.
JP62237112A 1987-09-24 1987-09-24 Semiconductor switch circuit Pending JPS6481410A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62237112A JPS6481410A (en) 1987-09-24 1987-09-24 Semiconductor switch circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62237112A JPS6481410A (en) 1987-09-24 1987-09-24 Semiconductor switch circuit

Publications (1)

Publication Number Publication Date
JPS6481410A true JPS6481410A (en) 1989-03-27

Family

ID=17010591

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62237112A Pending JPS6481410A (en) 1987-09-24 1987-09-24 Semiconductor switch circuit

Country Status (1)

Country Link
JP (1) JPS6481410A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5078918A (en) * 1988-06-02 1992-01-07 Bromine Compounds Ltd. Novel flame-retardant compositions

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5078918A (en) * 1988-06-02 1992-01-07 Bromine Compounds Ltd. Novel flame-retardant compositions

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