SE8900617D0 - MOS FIELD POWER TRANSISTOR CONTROL TYRISTOR - Google Patents

MOS FIELD POWER TRANSISTOR CONTROL TYRISTOR

Info

Publication number
SE8900617D0
SE8900617D0 SE8900617A SE8900617A SE8900617D0 SE 8900617 D0 SE8900617 D0 SE 8900617D0 SE 8900617 A SE8900617 A SE 8900617A SE 8900617 A SE8900617 A SE 8900617A SE 8900617 D0 SE8900617 D0 SE 8900617D0
Authority
SE
Sweden
Prior art keywords
thyristor
module
mos field
tyristor
power transistor
Prior art date
Application number
SE8900617A
Other languages
Swedish (sv)
Other versions
SE8900617L (en
SE463235B (en
Original Assignee
Asea Brown Boveri
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Publication of SE8900617D0 publication Critical patent/SE8900617D0/en
Application filed by Asea Brown Boveri filed Critical Asea Brown Boveri
Priority to SE8900617A priority Critical patent/SE463235B/en
Priority to EP19900904462 priority patent/EP0486496A1/en
Priority to JP50429490A priority patent/JPH04503735A/en
Priority to PCT/SE1990/000122 priority patent/WO1990010310A1/en
Priority to PCT/SE1990/000123 priority patent/WO1990010311A1/en
Publication of SE8900617L publication Critical patent/SE8900617L/en
Publication of SE463235B publication Critical patent/SE463235B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42308—Gate electrodes for thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/7317—Bipolar thin film transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H01L29/745—Gate-turn-off devices with turn-off by field effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H01L29/745—Gate-turn-off devices with turn-off by field effect
    • H01L29/7455—Gate-turn-off devices with turn-off by field effect produced by an insulated gate structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78612—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/78654—Monocrystalline silicon transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
    • H01L29/8086—Thin film JFET's

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thyristors (AREA)
  • Electronic Switches (AREA)

Abstract

An MOS field effect transistor controlled thyristor is formed with a large number of mutually identical thyristor modules, each one having a base region (3) and an emitter region (4) contiguous to the base region, which between them form an emitter junction. Each module has an MOS transistor (7, 8, 9, 10), integrated with the thyristor module, for controllable shunting of the emitter junction for turn-off of the thyristor module. The MOS transistor is of depletion type and its control electrode (10) is connected, by way of a current-limiting device (R) separate for the module, to a turn-off control connection (SS) common to all the modules of the thyristor.
SE8900617A 1989-02-23 1989-02-23 MOS FIELD POWER TRANSISTOR CONTROL TYRISTOR SE463235B (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
SE8900617A SE463235B (en) 1989-02-23 1989-02-23 MOS FIELD POWER TRANSISTOR CONTROL TYRISTOR
EP19900904462 EP0486496A1 (en) 1989-02-23 1990-02-22 Thyristor
JP50429490A JPH04503735A (en) 1989-02-23 1990-02-22 thyristor
PCT/SE1990/000122 WO1990010310A1 (en) 1989-02-23 1990-02-22 Thyristor
PCT/SE1990/000123 WO1990010311A1 (en) 1989-02-23 1990-02-22 Mos field effect transistor controlled thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE8900617A SE463235B (en) 1989-02-23 1989-02-23 MOS FIELD POWER TRANSISTOR CONTROL TYRISTOR

Publications (3)

Publication Number Publication Date
SE8900617D0 true SE8900617D0 (en) 1989-02-22
SE8900617L SE8900617L (en) 1990-08-24
SE463235B SE463235B (en) 1990-10-22

Family

ID=20375135

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8900617A SE463235B (en) 1989-02-23 1989-02-23 MOS FIELD POWER TRANSISTOR CONTROL TYRISTOR

Country Status (4)

Country Link
EP (1) EP0486496A1 (en)
JP (1) JPH04503735A (en)
SE (1) SE463235B (en)
WO (2) WO1990010311A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4100444A1 (en) * 1991-01-09 1992-07-16 Fraunhofer Ges Forschung INTEGRATED CIRCUIT BREAKER STRUCTURE
DE69228721T2 (en) * 1991-06-10 1999-10-21 Kabushiki Kaisha Toshiba, Kawasaki Insulated gate thyristor
SE468731B (en) * 1991-07-17 1993-03-08 Asea Brown Boveri WEAKLY TYRISTOR SYSTEM
JP2957795B2 (en) * 1992-03-16 1999-10-06 三菱電機株式会社 Semiconductor device and manufacturing method thereof
US5581295A (en) * 1992-11-27 1996-12-03 Eastman Kodak Company Method and apparatus for resequencing image data for a printhead
US5831289A (en) * 1997-10-06 1998-11-03 Northrop Grumman Corporation Silicon carbide gate turn-off thyristor arrangement
US7656003B2 (en) * 2006-08-25 2010-02-02 Hvvi Semiconductors, Inc Electrical stress protection apparatus and method of manufacture

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE392783B (en) * 1975-06-19 1977-04-18 Asea Ab SEMICONDUCTOR DEVICE INCLUDING A THYRIST AND A FIELD POWER TRANSISTOR PART
DE3018468A1 (en) * 1980-05-14 1981-11-19 Siemens AG, 1000 Berlin und 8000 München THYRISTOR WITH CONTROLLABLE EMITTER SHORT CIRCUITS AND METHOD FOR ITS OPERATION
DE3138763A1 (en) * 1981-09-29 1983-06-30 Siemens AG, 1000 Berlin und 8000 München LIGHT-IGNITABLE THYRISTOR WITH CONTROLLABLE EMITTER SHORT-CIRCUITS AND IGNITION GAIN
EP0107773B1 (en) * 1982-10-04 1987-03-11 General Electric Company Thyristor with turn-off capability
US4760432A (en) * 1985-11-04 1988-07-26 Siemens Aktiengesellschaft Thyristor having controllable emitter-base shorts
EP0226021A1 (en) * 1985-12-12 1987-06-24 BBC Brown Boveri AG Thyristor with switchable emitter shorting

Also Published As

Publication number Publication date
EP0486496A1 (en) 1992-05-27
WO1990010310A1 (en) 1990-09-07
WO1990010311A1 (en) 1990-09-07
JPH04503735A (en) 1992-07-02
SE8900617L (en) 1990-08-24
SE463235B (en) 1990-10-22

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