JPS5527790A - Transfer gate circuit - Google Patents
Transfer gate circuitInfo
- Publication number
- JPS5527790A JPS5527790A JP10132878A JP10132878A JPS5527790A JP S5527790 A JPS5527790 A JP S5527790A JP 10132878 A JP10132878 A JP 10132878A JP 10132878 A JP10132878 A JP 10132878A JP S5527790 A JPS5527790 A JP S5527790A
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- signal
- current
- mosfet7
- conducts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
Landscapes
- Electronic Switches (AREA)
- Logic Circuits (AREA)
Abstract
PURPOSE:To reduce the lowering of the signal level caused by the transmission as well as to increase the transmission signal current by controlling the bipolar transistor with use of MOSFET to the control circuit. CONSTITUTION:When the voltage higher than the threshold voltage of MOSFET7 is supplied to control terminal 2, MOSFET7 conducts to flow the drain current. And the base current is supplied to transistor 12 via resistance 13. Thus transistor 12 also conducts to transmit a large amount of signal current from signal input terminal 14 to signal output terminal 15. Furthermore, the variation of the signal level can be reduced by using the transistor featuring the small saturation voltage between the collector and the emitter for transistor 12.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10132878A JPS5527790A (en) | 1978-08-19 | 1978-08-19 | Transfer gate circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10132878A JPS5527790A (en) | 1978-08-19 | 1978-08-19 | Transfer gate circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5527790A true JPS5527790A (en) | 1980-02-28 |
Family
ID=14297751
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10132878A Pending JPS5527790A (en) | 1978-08-19 | 1978-08-19 | Transfer gate circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5527790A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57118443A (en) * | 1981-01-16 | 1982-07-23 | Fuji Xerox Co Ltd | Logic element |
JPS6264036U (en) * | 1985-10-09 | 1987-04-21 |
-
1978
- 1978-08-19 JP JP10132878A patent/JPS5527790A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57118443A (en) * | 1981-01-16 | 1982-07-23 | Fuji Xerox Co Ltd | Logic element |
JPS6264036U (en) * | 1985-10-09 | 1987-04-21 |
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