JPS55166952A - Bistable circuit - Google Patents

Bistable circuit

Info

Publication number
JPS55166952A
JPS55166952A JP7583279A JP7583279A JPS55166952A JP S55166952 A JPS55166952 A JP S55166952A JP 7583279 A JP7583279 A JP 7583279A JP 7583279 A JP7583279 A JP 7583279A JP S55166952 A JPS55166952 A JP S55166952A
Authority
JP
Japan
Prior art keywords
driving
drain
power supply
source
igfet4
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7583279A
Other languages
Japanese (ja)
Inventor
Koichi Fujita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7583279A priority Critical patent/JPS55166952A/en
Publication of JPS55166952A publication Critical patent/JPS55166952A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/435—Resistive materials for field effect devices, e.g. resistive gate for MOSFET or MESFET

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To reduce the occupying area of bistable circuit by forming a gate electrode of resistor. CONSTITUTION:One end of a resistor 11 functioning also as a load and a gate electrode is connected to one terminal of a power supply, and connected at the other end through a channel of a driving IGFET4 to a driving IGFET3 at the drain (or the source). The source (or drain) of the driving IGFET3 is connected to the other terminal of the power supply. Similarly, one end of the resistor 12 is connected to one end of the power supply, passed through the channel of the driving IGFET3 to the drain (or source) of the driving IGFET4 at the other end. The source (or drain) of the driving IGFET4 is connected to the other terminal of the power supply.
JP7583279A 1979-06-13 1979-06-13 Bistable circuit Pending JPS55166952A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7583279A JPS55166952A (en) 1979-06-13 1979-06-13 Bistable circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7583279A JPS55166952A (en) 1979-06-13 1979-06-13 Bistable circuit

Publications (1)

Publication Number Publication Date
JPS55166952A true JPS55166952A (en) 1980-12-26

Family

ID=13587549

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7583279A Pending JPS55166952A (en) 1979-06-13 1979-06-13 Bistable circuit

Country Status (1)

Country Link
JP (1) JPS55166952A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57113487A (en) * 1980-12-29 1982-07-14 Fujitsu Ltd Metal-insulator-semiconductor type static memory cell
KR20170073612A (en) * 2014-11-07 2017-06-28 데이코 아이피 홀딩스 엘엘시 Check valve with improved sealing member

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57113487A (en) * 1980-12-29 1982-07-14 Fujitsu Ltd Metal-insulator-semiconductor type static memory cell
KR20170073612A (en) * 2014-11-07 2017-06-28 데이코 아이피 홀딩스 엘엘시 Check valve with improved sealing member

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